Unique multi-hierarchical Z-scheme heterojunction of branching SnIn4S8 nanosheets on ZnIn2S4 nanopetals for boosted photocatalytic performance

Photothermal-coupled solar photocatalytic CO2reduction with high efficiency and selectivity on a MoO3−x@ZnIn2S4core–shell S-scheme heterojunction

“…The material characterization results including X-ray diffraction (XRD) patterns, scanning electron microscopy (SEM) images, energy dispersive spectrometer (EDS) spectra, transmission electron microscopy (TEM) images, high resolution transmission electron microscopy (HRTEM) images, selected area electron diffraction (SAED) patterns, X-ray photoelectron spectroscopy (XPS) spectra, valence band XPS (VB-XPS) spectra, nitrogen adsorption-desorption isotherms and pore size distribution curves, ultraviolet-visible-near infrared (UV-Vis-NIR) absorption spectra, photoluminescence (PL) emission spectra, and time-resolved photoluminescence (TR-PL) decay spectra, as well as the photoelectrochemical tests can refer to our previous work. 40 The EDS elemental mapping images in this work were obtained by both SEM and TEM tests. In addition, to determine the presence of oxygen vacancies, 10 mg of product was put into the sample tube of a Bruker EMX-PLUS spectrometer for room temperature electron paramagnetic resonance (EPR) spectroscopy.…”

Vacancy-Mediated Z-Scheme Heterostructure in SnO2-Decorated Spinel In3–xS4 with Boosted Photocatalytic Activity

“…Under visible light excitation, the valence band electrons of In 3– x S 4 transition to the conduction band to form electron–hole pairs. The oxidation potential of its valence band holes (0.72 V vs NHE) is more negative with respect to RhB + /RhB (0.95 V vs NHE) and H 2 O/ • OH (2.80 V vs NHE), which is insufficient for the oxidative degradation of RhB and oxidation of H 2 O to generate • OH. The wide intrinsic band gap of SnO 2 makes it difficult to be excited by visible light, but the presence of oxygen vacancies can create an additional defective energy level in the forbidden band, allowing the excitation of SnO 2 under visible light.…”

“…Under visible light excitation, the valence band electrons of In 3−x S 4 transition to the conduction band to form electron− hole pairs. The oxidation potential of its valence band holes (0.72 V vs NHE) is more negative with respect to RhB + /RhB (0.95 V vs NHE) 62 and H 2 O/ • OH (2.80 V vs NHE), 63 Thanks to the close contact interface between SnO 2 and In 3−x S 4 , a solid−solid pathway can be established for efficient charge transfer. The XPS results evidence that after the combination of SnO 2 and In 3−x S 4 , the electrons tend to move from In 3−x S 4 to SnO 2 , and eventually a built-in electric field can be formed at the interface between them, with the In 3−x S 4 side becoming the electron depletion layer and the SnO 2 side being the electron accumulation layer.…”

Latest Progress on Photocatalytic H2 Production by Water Splitting and H2 Production Coupled with Selective Oxidation of Organics over ZnIn2S4-Based Photocatalysts

“…Moreover, the photocorrosion of ZnIn 2 S 4 is effectively suppressed, leading to a good stability after five cycles. More recently, LSPR-aided W 18 O 49 /ZnIn 2 S 4 , 32 ZnIn 2 S 4 /g-C 3 N 4 , 132 SnIn 4 S 8 /ZnIn 2 S 4 , 133 and P-doped h-BN/ ZnIn 2 S 4 134 direct Z-scheme heterostructures are also reported. In 2020, Yu's group put forward a new kind of heterojunction: the S-scheme heterojunction 135 consisting of an oxidation photocatalyst (OP) and a reduction photocatalyst (RP) (Figure 6f).…”

“…Moreover, the photocorrosion of ZnIn 2 S 4 is effectively suppressed, leading to a good stability after five cycles. More recently, LSPR-aided W 18 O 49 /ZnIn 2 S 4 , ZnIn 2 S 4 /g-C 3 N 4 , SnIn 4 S 8 /ZnIn 2 S 4 , and P-doped h-BN/ZnIn 2 S 4 direct Z-scheme heterostructures are also reported.…”