The anomalous Hall effect ͑AHE͒ has been studied systematically in the low-conductivity ferromagnetic oxide Fe 3−x Zn x O 4 with x = 0, 0.1, and 0.5. We used ͑001͒, ͑110͒, and ͑111͒ oriented epitaxial Fe 3−x Zn x O 4 films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strain state, and oxygen deficiency. Despite substantial differences in the magnetic properties and magnitudes of the anomalous Hall conductivity xy AHE and the longitudinal conductivity xx over several orders of magnitude, a universal scaling relation xy AHE ϰ xx ␣ with ␣ = 1.69Ϯ 0.08 was found for all investigated samples. Our results are in agreement with recent theoretical and experimental findings for ferromagnetic metals in the dirty limit, where transport is by metallic conduction. We find the same scaling relation for magnetite, where hopping transport prevails. The fact that this relation is independent of crystallographic orientation, Zn content, strain state, and oxygen deficiency suggests that it is universal and particularly does not depend on the nature of the transport mechanism.The physics of the Hall effect in ferromagnetic materials is discussed intensively and controversially since the 1950s. Early experimental work on ferromagnetic metals suggested that the Hall resistivity can be described by the empirical relation xy = R O 0 H + R A 0 M, where H is the applied magnetic field and M the spontaneous magnetization of the ferromagnet. The first term, proportional to H and characterized by the ordinary Hall coefficient R O , describes the ordinary Hall effect ͑OHE͒, whereas the second term, proportional to M and characterized by the anomalous Hall coefficient R A , represents the anomalous Hall effect ͑AHE͒. Although the AHE is generally observed in ferromagnetic metals and semiconductors, its origin has been one of the most intriguing and controversial issues in solid-state physics, and various theories based on intrinsic and extrinsic mechanisms have been proposed. 1-5 Whereas the extrinsic origins of the AHE are based on skew scattering 2,3 and side jump 4,5 mechanisms due to spin-orbit interaction connecting the spin polarization with the orbital motion of electrons, the intrinsic origin of the AHE is closely related to the Berry phase 6 of the Bloch electrons. 1,7-13 The dissipationless and topological nature of the intrinsic mechanism has attracted much attention recently, and various first-principles band-structure calculations have been performed to explain the AHE in transition metals, 14,15 ferromagnetic semiconductors, 9,10,16 and oxides. [17][18][19][20] A powerful experimental test for AHE models is the measurement of the scaling of the anomalous Hall resistivity ͑conductivity͒ xy AHE ͑ xy AHE ͒ with the longitudinal resistivity ͑conductivity͒ xx ͑ xx ͒. The skew scattering and side jump mechanisms are known to yield xy AHE ϰ xx ͑ xy AHE ϰ xx ͒ and xy AHE ϰ xx 2 ͑ xy AHE ϳ const͒, respectively. Recently, a unifie...