Here, we present a reliable process to deposit transparent conductive films on silicon oxide, quartz, and sapphire using a solid carbon source. This layer consists of partially ordered graphene flakes with a lateral dimension of about 5 nm. The process does not require any catalytic metal and exploits a high current arc evaporation (U-HCA) to homogeneously deposit a layer of carbon on heated substrates. A gas atmosphere consisting of Argon or Argon/Hydrogen blend acting as a buffer influences the morphology of the growing film. scanning tunneling microscopy, transmission electron microscopy, and Raman spectra were used for a thorough characterization of the samples in order to optimize the growth parameters. The best carbon layers have a surface resistance of 5.7 Â 10 3 X ٗ whereas the optical transparency of the coatings is 88% with an excellent homogeneity over areas of several cm 2 . Such results are compatible with most semiconductor fabrication processes and make this method very promising for various industrial applications. V C 2015 AIP Publishing LLC. [http://dx