Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices

Min, Jung‐Wook; Priante, Davide; Tangi, Malleswararao; Liu, Guangyu; Kang, Chun Hong; Prabaswara, Aditya; Zhao, Chao; Al-Maghrabi, Latifah; Alaskar, Yazeed; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

doi:10.1117/1.jnp.12.043511

Cited by 28 publications

(21 citation statements)

References 209 publications

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“…However, it suffers from a high power consumption, a bulky form factor, and a high cost 10 . In contrast, compact and small-footprint group-III-nitride-based PDs 11 , e.g., AlGaN- 12 , AlN- 13 , and BN 14 -based PDs, suffer from costly materials and substrate development. The existence of defect states and crystal dislocations related to high dark current complicates the design process and delays the further deployment of these PDs in UV-based communication systems.…”

Section: Introductionmentioning

confidence: 99%

High-speed colour-converting photodetector with all-inorganic CsPbBr3 perovskite nanocrystals for ultraviolet light communication

et al. 2019

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Optical wireless communication (OWC) using the ultra-broad spectrum of the visible-to-ultraviolet (UV) wavelength region remains a vital field of research for mitigating the saturated bandwidth of radio-frequency (RF) communication. However, the lack of an efficient UV photodetection methodology hinders the development of UV-based communication. The key technological impediment is related to the low UV-photon absorption in existing silicon photodetectors, which offer low-cost and mature platforms. To address this technology gap, we report a hybrid Si-based photodetection scheme by incorporating CsPbBr3 perovskite nanocrystals (NCs) with a high photoluminescence quantum yield (PLQY) and a fast photoluminescence (PL) decay time as a UV-to-visible colour-converting layer for high-speed solar-blind UV communication. The facile formation of drop-cast CsPbBr3 perovskite NCs leads to a high PLQY of up to ~73% and strong absorption in the UV region. With the addition of the NC layer, a nearly threefold improvement in the responsivity and an increase of ~25% in the external quantum efficiency (EQE) of the solar-blind region compared to a commercial silicon-based photodetector were observed. Moreover, time-resolved photoluminescence measurements demonstrated a decay time of 4.5 ns under a 372-nm UV excitation source, thus elucidating the potential of this layer as a fast colour-converting layer. A high data rate of up to 34 Mbps in solar-blind communication was achieved using the hybrid CsPbBr3–silicon photodetection scheme in conjunction with a 278-nm UVC light-emitting diode (LED). These findings demonstrate the feasibility of an integrated high-speed photoreceiver design of a composition-tuneable perovskite-based phosphor and a low-cost silicon-based photodetector for UV communication.

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Section: Introductionmentioning

confidence: 99%

High-speed colour-converting photodetector with all-inorganic CsPbBr3 perovskite nanocrystals for ultraviolet light communication

et al. 2019

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“…[142][143][144][145][146][147][148][149] In recent years, PAMBE has emerged as a tool to grow device-quality AlGaN nanowires (including AlN nanowires). [18][19][20][21][22] Compared with their planar counterparts, AlGaN nanowires possess a number of advantages. First, due [119] Copyright 2018, AIP Publishing.…”

Section: Algan Nanowires Grown By Pambementioning

confidence: 99%

“…Among various candidates, aluminum gallium nitride (AlGaN) alloys hold a great promise to develop semiconductor DUV lasers due to their ultrawide, direct, and tunable bandgap energies from 3.4 to 6.2 eV that correspond to %364-200 nm in the emission wavelength, respectively. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] In addition, due to the strong chemical bonding, AlGaNbased devices possess high melting points, excellent mechanical strength, and are highly degradation-resistant, which make them highly suitable for applications in extreme and harsh environments.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Zhang

Yin

Zhao

2021

Physica Rapid Research Ltrs

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Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its direct, tunable, and ultrawide bandgap energies (3.4-6.2 eV). The progress, nonetheless, has been remained slow, which is ascribed to a few major challenges, including large dislocation and defect densities, difficulty in obtaining p-type high-Al-content AlGaN layers with a sufficient p-type conduction, the large electric polarization fields, and the unfavorable optical polarization. In recent years, with AlGaN alloys grown by molecular beam epitaxy (MBE), including both thin films and nanowire structures, remarkable advancements have been made, such as highly conductive p-type high-Al-content AlGaN epilayers with resistivities as low as 0.7 Ω cm and DUV lasing down to 239 nm with nanowire structures under a direct current injection. Herein, the recent progress on the DUV lasers by the MBE-grown AlGaN is reviewed. The challenges and prospects of the MBE-grown AlGaN for DUV lasers are also discussed.

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“…Ideally, graphene as a dangling-bond-free two-dimensional planar material can prevent the propagation of crystalline information from the underlying substrates by introducing the different bonding mechanisms in van der Waals epitaxy (vdWE) [9,10], in which the grown epilayers need not be necessarily lattice-matched with the underlying substrate [11]. Hence, graphene acting as a buffer layer has attracted much interest in recent years, such as GaN-based LEDs prepared on graphene-covered sapphire [12][13][14], vertical-layout AlGaN nanorods obtained on graphene/silicon [15][16][17], and high-quality GaN or AlN films grown on graphene/SiC [18][19][20]. However, these works are all based on single crystalline substrates.…”

Section: Introductionmentioning

confidence: 99%

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

Song

Ren

Wang³

et al. 2020

Crystals

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The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amorphous SiO2 substrate with the use of nanorods and graphene buffer layers by metal organic chemical vapor deposition (MOCVD). The effect of different growth parameters on the morphology and vertical-to-lateral aspect ratio of nanorods was discussed by analyzing growth kinetics. Furthermore, we tuned nanorod coalescence to obtain continuous GaN films with a blue-LED structure by adjusting growth conditions. The GaN films exhibited a hexagonal wurtzite structure and aligned c-axis orientation demonstrated by X-ray diffractometer (XRD), Raman, and transmission electron microscopy (TEM) results. Finally, five-pair InGaN/GaN multi-quantum-wells (MQWs) were grown. The photoluminescence (PL) showed an intense emission peak at 475 nm, and the current–voltage (I-V) curve shows a rectifying behavior with a turn-on voltage of 5.7 V. This work provides a promising fabrication method for the large-area and low-cost GaN-based devices on amorphous substrates and opens up the further possibility of nitride integration with Si (100) complementary metal oxide semiconductor (CMOS) electronics.

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Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices

Abstract: Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices,"

Cited by 28 publications

References 209 publications

High-speed colour-converting photodetector with all-inorganic CsPbBr3 perovskite nanocrystals for ultraviolet light communication

High-speed colour-converting photodetector with all-inorganic CsPbBr3 perovskite nanocrystals for ultraviolet light communication

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

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