2013
DOI: 10.1039/c3cc41897a
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Unprecedented gallium–nitrogen anions: synthesis and characterization of [(Cl3Ga)3N]3− and [(Cl3Ga)2NSnMe3]2−

Abstract: The [(Cl3Ga)3N](3-) (1) anion, which is the sole example of a discrete chemical species containing a μ3-N atom bound only to gallium, was isolated from the reaction of Cl3Ga·N(SnMe3)3 with [GaCl4](1-). The analogous reaction of [GaCl4](1-) with (Me3Sn)3N afforded [(Cl3Ga)2NSnMe3](2-) (2), which is also an unprecedented anion containing a single μ3-N atom bound to only gallium and tin.

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Cited by 7 publications
(4 citation statements)
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“…In contrast, the present nitridation method overcomes the reaction barrier through the production of a nonequilibrated molecular beam with high kinetic energy, in addition to the external thermal energy. Although many intermediate species are assumed, , a key intermediate in the nitridation reaction is considered to be the partly nitrided (GaCl 3 ) 3 N . A similar decrease in the activation energy was observed in previous study on the oxidation of a silicon surface …”
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confidence: 69%
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“…In contrast, the present nitridation method overcomes the reaction barrier through the production of a nonequilibrated molecular beam with high kinetic energy, in addition to the external thermal energy. Although many intermediate species are assumed, , a key intermediate in the nitridation reaction is considered to be the partly nitrided (GaCl 3 ) 3 N . A similar decrease in the activation energy was observed in previous study on the oxidation of a silicon surface …”
supporting
confidence: 69%
“…In contrast, the present nitridation method overcomes the reaction barrier through the production of a nonequilibrated molecular beam with high kinetic energy, in addition to the external thermal energy. Although many intermediate species are assumed, 13,28 a key intermediate in the nitridation reaction is considered to be the partly nitrided (GaCl 3 ) 3 N. 27 A similar decrease in the activation energy was observed in previous study on the oxidation of a silicon surface. 23 The product after treatment of the GaCl 3 layer on a quartz or silicon substrate surface at room temperature for 20 min exhibited a characteristic photoluminescence (PL) emission at 433 nm (2.86 eV) by excitation at 270 nm (Figure 3B).…”
Section: Acs Applied Materials and Interfacessupporting
confidence: 59%
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