Unraveling interface characteristics of Zn(O,S)/Cu(In,Ga)Se2 at nanoscale: Enhanced hole transport by tuning band offsets

Kim, Juran; Kim, Jayeong; Ko, Eungil; Park, Ha Kyung; Yoon, Seokhyun; Cho, Dae‐Hyung; Lee, Woo Jung; Chung, Yong‐Duck; Jo, William

doi:10.1016/j.apsusc.2019.144782

Cited by 11 publications

(7 citation statements)

References 45 publications

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“…The conversion efficiencies (η) of the bare cell and PDMS with embedded ZnO‐nanorod film were 7.23% and 7.79%, respectively; the approximate open‐circuit voltage (V oc ) was 611 mV; the fill factor (FF) was 64.5%; and the short‐circuit currents (J sc ) were 18.27 and 19.77 mA/cm 2 . The conversion efficiencies (~7.23%) of our bare CIGS cells are comparable to those obtained in earlier literatures 26‐29 . Therefore, as J sc of the CIGS photovoltaic cell of the PDMS with the embedded ZnO nanorods is larger than the bare cell, the photovoltaic efficiency is enhanced.…”

Section: Resultssupporting

confidence: 88%

“…The conversion efficiencies (7.23%) of our bare CIGS cells are comparable to those obtained in earlier literatures. [26][27][28][29] Therefore, as J sc of the CIGS photovoltaic cell of the PDMS with the embedded ZnO nanorods is larger than the bare cell, the photovoltaic efficiency is enhanced. The photocurrent enhancement factor (EF jsc ) is 8.21%, as calculated by the following formula:…”

Section: H≥0:4λ Longest : ð5þmentioning

confidence: 99%

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Antireflection layer of ZnO nanorod embedded in PDMS film for enhancing omnidirectional photovoltaic performance of CIGS photovoltaic cell

et al. 2020

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Summary In this study, a flexible polydimethylsiloxane (PDMS) ARL with embedded ZnO‐NRs was fabricated on the surfaces of Cu(In,Ga)Se2 (CIGS) solar cells using the chemical solution method. Under the conditions of an AM1.5G solar spectrum, the application of the PDMS ARL of embedded ZnO‐NRs on the surface of a CIGS solar cell can effectively increase the conversion efficiency of the solar cell from 7.23% to 7.79%. In addition, broadband and omnidirectional light harvesting are important as the sun moves over time; therefore, omnidirectional anti‐reflection applications of various ARLs on CIGS photovoltaic cells were also studied.

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Section: Resultssupporting

confidence: 88%

Section: H≥0:4λ Longest : ð5þmentioning

confidence: 99%

Antireflection layer of ZnO nanorod embedded in PDMS film for enhancing omnidirectional photovoltaic performance of CIGS photovoltaic cell

et al. 2020

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“…1−3 To avoid the toxicity of cadmium (Cd) from the CdS buffer layer in CIGS thin-film solar cells, active exploration of replacing it partly or completely by alternative environment-friendly buffers (e.g., Zn(O,S)) has recently been made. 4−6 Zn(O,S) stands out by its larger and tunable band gap, 7 low toxicity of precursors and endproducts, 8 and the possibility to be produced through a simple and low-cost method. 6,9 Impressively, based on the Zn(O,S) buffer layer, the record high efficiency of Cu(In,Ga)(Se,S) 2 (CIGSSe) thin-film solar cells recently reached 23.35%, 10 which is a great inspiration to all researchers in this field.…”

Section: Introductionmentioning

confidence: 99%

“…Cu(In,Ga)Se 2 (CIGS), as one of the most successful photovoltaic (PV) materials, has been widely and deeply researched in the past 30 years in both cells with small area and modules with a large area. − To avoid the toxicity of cadmium (Cd) from the CdS buffer layer in CIGS thin-film solar cells, active exploration of replacing it partly or completely by alternative environment-friendly buffers (e.g., Zn(O,S)) has recently been made. − Zn(O,S) stands out by its larger and tunable band gap, low toxicity of precursors and end-products, and the possibility to be produced through a simple and low-cost method. , Impressively, based on the Zn(O,S) buffer layer, the record high efficiency of Cu(In,Ga)(Se,S) 2 (CIGSSe) thin-film solar cells recently reached 23.35%, which is a great inspiration to all researchers in this field. Regrettably, it is still difficult to upscale the small-area highly efficient CIGS solar cells to large-area modules in terms of preserving the cell efficiency, production throughput, process reliability, and costs. , As regards the fabrication of Zn(O,S)/CIGS devices, process reliability is one of the most important factors that is strangling the related industry.…”

Section: Introductionmentioning

confidence: 99%

Double-Sided Heat-Exchange CBD System for Homogeneous Zn(O,S) Thin Films in Highly Efficient CIGS Solar Devices

Gong

Zhu³

et al. 2020

ACS Appl. Energy Mater.

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Zn(O,S) thin film as one of the most promising alternative buffer layers in Cu(In,Ga)Se 2 solar devices has drawn considerable attention and been intensively studied in recent years. However, the reliability of the fabrication process still impeded its industrial application. In this work, a self-designed double-sided heat-exchange chemical bath deposition (CBD) system was introduced to deposit large-area homogeneous Zn(O,S) thin films. Compared with the traditional CBD setup, the self-designed system possesses several advantages including fast heat-up, homogeneous heating, wide adaptability, and cost-saving. Intriguingly, based on the self-designed system, high-quality Zn(O,S) thin films with less amounts of OH − and O 2− impurities were easily and successfully deposited without changing the recipe. Furthermore, we have also demonstrated the homogeneity of the solar cells made from the same substrate with a large area and adopted this technique for the fabrication of modules both in the laboratory and in our partner company Shinetech Co., Ltd. As a preliminary result, over 16% conversion efficiency for rigid modules (53 cm 2 ) and over 10% for flexible modules (36 cm 2 ) based on the self-designed deposition system were obtained. As a consequence, a deeper understanding may be provided to deposit high-quality and large-scale Zn(O,S) thin films and hopefully also applicable to industrial.

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“…[ 31 ] Accordingly, the work function of Zn(O,S) also varies by changing the ratio of oxygen and sulfur contents. Hence, the optimal conduction band offset (CBO) at the Zn(O,S) buffer/CIGSe absorber interface can be found by adjusting the O:S ratio [ 32 ] for a fixed bandgap of the CIGSe absorber. In this report, the bandgap of the CIGSe absorber was fixed at 1.18 eV.…”

Section: Introductionmentioning

confidence: 99%

Practical Enhancements in Current Density and Power Generation of Bifacial Semitransparent Ultrathin CIGSe Solar Cells via Utilization of Wide Bandgap Zn‐Based Buffer

Kim

Shin

et al. 2022

Advanced Science

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Among many building-integrated semitransparent photovoltaics (BISTPVs), semitransparent ultrathin (STUT) Cu(In x ,Ga 1-x )Se 2 (CIGSe) solar cells are distinguishable due to their potential high power conversion efficiency (PCE) among other thin-film solar cells, versatile applicability based on thin film deposition processes, high stability consisting of all inorganic compositions, and practical expandability to bifacial applications. However, the fundamental trade-off relationship between PCE and transparency limits the performance of BISTPV because implementing a higher semitransparency lowers the optical budget of incoming light. To expand the available optical budget and to enhance the PCE while maintaining a suitable transparency in STUT CIGSe solar cell with single-stage coevaporated 500-nm-thick absorber, an atomic layer deposited wide bandgap Zn(O,S) buffer is introduced as the replacement of conventional CdS buffer, which partially limits incoming light less than 520 nm in wavelength. As a replacement result, more incoming light becomes valid for power conversion, and the short circuit current density (J sc ) has increased comparatively by 17%, which has directly lead to a large increase in PCE up to 12.41%. Furthermore, Zn(O,S) buffer in the STUT CIGSe solar cell also has enhanced the bifacial compatible efficiency (BCE), which has increased to 14.44% at 1.3 sun and 19.42% at 2.0 sun.

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Unraveling interface characteristics of Zn(O,S)/Cu(In,Ga)Se2 at nanoscale: Enhanced hole transport by tuning band offsets

Cited by 11 publications

References 45 publications

Antireflection layer of ZnO nanorod embedded in PDMS film for enhancing omnidirectional photovoltaic performance of CIGS photovoltaic cell

Antireflection layer of ZnO nanorod embedded in PDMS film for enhancing omnidirectional photovoltaic performance of CIGS photovoltaic cell

Double-Sided Heat-Exchange CBD System for Homogeneous Zn(O,S) Thin Films in Highly Efficient CIGS Solar Devices

Practical Enhancements in Current Density and Power Generation of Bifacial Semitransparent Ultrathin CIGSe Solar Cells via Utilization of Wide Bandgap Zn‐Based Buffer

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