Metal-halide perovskites are a class of optoelectronic materials for solar cells. Since Miyasaka et al. first reported perovskite solar cells (PSCs) based on a liquid junction in 2009, [1] recent solidstate PSCs using 3D polycrystalline perovskites have demonstrated a certified power conversion efficiency (PCE) of 25.7% being comparable to the existing photovoltaic technology of Si solar cells. [2] The achievement of the high-efficiency PSCs can be attributed to the excellent optoelectronic properties of perovskite light absorbers with a high-absorption coefficient and long-range carrier diffusion length. Also, its simple fabrication process using low-cost materials opens a bright prospect of commercialization of PSCs in the energy industry. In general, the lattice structure of metal-halide perovskites consists of three distinct positions that formulate ABX 3 cubic unit cells, where cation A (e.g., methylammonium (MA þ ), formamidinium (FA þ ), and/or Cs þ ) is located at (0,0,0), cation B (e.g., Pb 2þ ) is at (1/2,1/2,1/2), and halide X (e.g., Cl À , Br À , and I À ) is at the center of the six planes of the cubic at (1/2,1/2,0) (Figure 1a). [3] Therefore, when the Goldschmidt tolerance factor is between 0.8 and 1.0, and the octahedral factor is between 0.442 and 0.895, 3D perovskites can be formulated with a high degree of freedom in terms of compositional engineering, which has enabled and will enable the advancement of perovskites as a light absorber. [3,4] Nevertheless, perovskites fundamentally suffer from their internal defects in the bulk and at the surface of their polycrystalline film. [5][6][7][8] The presence of some defects accompanies the formation of electronic states within the bandgap of perovskites, leading to nonradiative recombination of excitons and charge carriers, thereby degrading photovoltaic characteristics of PSCs. Furthermore, the defects cause structural degradation of perovskites as they migrate due to their ionic nature. [9] Certainly, deeplevel defects are undesirable because they are primary nonradiative recombination center trapping excitons and charge carriers. In contrast, the so-called defect tolerance of perovskites, i.e., those with the benign nature of the shallow defects, has been known to enable efficient radiative recombination of charge carriers. [10] However, the shallow-level defects may also be problematic as they can lead to the formation of polarons that may activate the nonradiative process degrading the photovoltaic performance of PSCs. [11] Several studies have revealed that interstitial iodide and iodide vacancy are responsible for the formation of deep-, and shallow-level trap states, respectively, [12,13] and their high density in perovskites due to the low formation energy may result