“…Furthermore, HAADF-STEM opens the possibility to create 3D atomic models of the nanostructures under study, in order to get a deeper insight into the main growth processes from an atomistic point of view, and in parallel complement the study with DFT analysis for energetic calculations of the different interfaces created and a basic explanation of defect formation. 57,64,65 Strain relaxation mechanism evaluation will follow by performing HAADF-STEM image simulation, from the 3D atomic models, and extended dedicated analysis such as geometrical phase analysis (GPA). 66–69 The application of such technique to the experimental and simulated HAADF-STEM images ensures the possibility to verify the growth relaxation mechanisms involved in the nanostructure being studied, together with relative dilatation and rotation of the atomic planes, giving a complete illustration of the growth process characteristics.…”