Unravelling the mechanism of large room-temperature magnetoresistance in silicon

Schoonus, Jjhm Jurgen; Haazen, Ppj; Swagten, Hjm Henk; Koopmans, B.

doi:10.1088/0022-3727/42/18/185011

Cited by 33 publications

(29 citation statements)

References 18 publications

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“…As the FV would remain large, with the reduced limitation from λ D , a large FV may produce a large MR even in intrinsic samples. This could help to explain the large MR in high electric fields reported for intrinsic silicon (i-Si)212223. For instance, with typically 〈 N i 〉 ∼ 10 12 cm 3 at 300 K, 〈( N i − 〈 N i 〉) 2 〉/〈 N i 〉 2 ∼ 0.01.…”

Section: Discussionmentioning

confidence: 98%

Linear magnetoresistance in n-type silicon due to doping density fluctuations

Porter

Marrows

2012

Sci Rep

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We report the observation of a large linear magnetoresistance in the ohmic regime in commonplace commercial n-type silicon wafer with a P dopant density of (1.4±0.1) ×1015 cm–3, and report measurements of it in the temperature range 30–200 K. It arises from the deformation of current paths, which causes a part of the Hall field to be detected at the voltage probes. In short, wide samples we found linear magnetoresistance as large as 4707% in an 8 tesla field at 35 K. Sample geometry effects like these are commonplace in commercial Hall sensors. However, we found that the effect persisted in long, thin samples where the macroscopic current flow should be uniform between the voltage probes: we observed a magnetoresistance of 445% under the same conditions as above. We interpret this result as arising due to spatial fluctuations in the donor density, in the spirit of the Herring model.

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Section: Discussionmentioning

confidence: 98%

Linear magnetoresistance in n-type silicon due to doping density fluctuations

Porter

Marrows

2012

Sci Rep

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“…12,13 In electric fields above a certain critical value, electrons acquire the energy equal to the ionization energy and generation of electron-hole pairs occurs. This process abruptly enhances the electric current through a device.…”

Section: Introductionmentioning

confidence: 99%

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

et al. 2017

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We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.

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“…In a strong applied electric field, E, carriers can gain enough kinetic energy to ionize dopant impurities at low temperature [9][10][11] and/or to generate electron-hole pairs by interband impact ionization leading to avalanche breakdown [5,12,13], which greatly increases the conductivity. A magnetic field, B, applied perpendicular to the direction of the current flow, can strongly affect these impact ionization processes by increasing the binding energy of electrons bound onto impurities and hence the activation energy and electric field required for impurity ionization [9][10][11]; also, the Lorentz force exerted on the conduction electrons deflects the electron motion away from the direction of the electric field, effectively increasing the electric field required for excitation of electrons across the band gap.…”

Section: Introductionmentioning

confidence: 99%

“…A magnetic field, B, applied perpendicular to the direction of the current flow, can strongly affect these impact ionization processes by increasing the binding energy of electrons bound onto impurities and hence the activation energy and electric field required for impurity ionization [9][10][11]; also, the Lorentz force exerted on the conduction electrons deflects the electron motion away from the direction of the electric field, effectively increasing the electric field required for excitation of electrons across the band gap. Thus a large magnetoresistance (MR) can result from the effect of a magnetic field on the hot carrier dynamics [11,14,15] and/or applied voltages in excess of tens or even hundreds of volts.…”

Section: Introductionmentioning

confidence: 99%

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

et al. 2014

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We report on hot electron induced impact ionization and large room-temperature magnetoresistance (MR) in micron-sized channels of n-type high-mobility InAs (μ = 3.3 m 2 V −1 s −1 at T = 300 K): the MR reaches values of up to 450% in magnetic fields of 1 T and applied voltages of ß1 V and is weakly dependent on temperature. We present Monte Carlo simulations of the hot electron dynamics to account for the large MR and its dependence on the sample geometry and applied electric and magnetic fields. Our work demonstrates that the impact ionization of electrons at room temperature, under small applied magnetic fields (<1 T) and small voltages (<1 V), can provide an extremely sensitive mechanism for controlling the electrical resistance of high-mobility semiconductors.

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Unravelling the mechanism of large room-temperature magnetoresistance in silicon

Cited by 33 publications

References 18 publications

Linear magnetoresistance in n-type silicon due to doping density fluctuations

Linear magnetoresistance in n-type silicon due to doping density fluctuations

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

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