Perpendicularly magnetized materials have attracted significant interest owing to their high anisotropy, which gives rise to extremely narrow, nanosized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a new class of data, memory and logic devices. Here we propose the spin Hall effect as an alternative mechanism for CIDWM. We are able to carefully tune the net spin Hall current in depinning experiments on Pt/Co/Pt nanowires, offering unique control over CIDWM. Furthermore, we determine that the depinning efficiency is intimately related to the internal structure of the domain wall, which we control by the application of small fields along the nanowire. This manifestation of CIDWM offers an attractive degree of freedom for manipulating domain wall motion by charge currents, and sheds light on the existence of contradicting reports on CIDWM in perpendicularly magnetized materials.

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DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement:

In this experimental study, we confirm that the magnetoresistance effect measured in boron-doped Si–SiO2–Al structures originates from bulk silicon, and prove that the magnetic field non-uniformly squeezes the acceptor wave functions. In line with the expectation that the effect of a magnetic field on an acceptor wave function becomes stronger with increasing distance from the impurity centre, we show that the magnetoresistance increases for decreasing doping concentration, although the role of background impurities in this process cannot be completely excluded. When using an ultrathin insulating layer instead of ohmic contacts in the latter devices, large constant-voltage magnetoresistances (MR > 1000% at 1 MA m−1) are obtained in low-doped silicon at room temperature.

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