Unseeded growth of germanium nanowires by vapor-liquid-solid mechanism

Zaitseva, Natalia; Harper, Jennifer S.; Gerion, Daniele; Saw, C. K.

doi:10.1063/1.1856695

Cited by 26 publications

(35 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…who investigated the formation of unseeded germanium nanowires in the liquid phase of high boiling point solvents. 19,21 While increased reactions temperatures were found to alter the relative percentage of each type of wire, the diameter ranges of each wire type remained constant.…”

Section: Ii: Experimentalmentioning

confidence: 99%

Role of Defects and Growth Directions in the Formation of Periodically Twinned and Kinked Unseeded Germanium Nanowires

Geaney

Dickinson

Weng

et al. 2011

Crystal Growth & Design

View full text Add to dashboard Cite

Here we show the impact of preferred growth directions and defects in the formation of complex Ge nanowire (NW) structures grown by a simple organic medium based synthesis. Various types of NWs are examined including: straight defect free NWs; periodically bent NWs with precise angles between the NW segments; NWs with mutually exclusive lateral or longitudinal faults; and more complex "wormlike" structures. We show that choice of solvent and reaction temperature can be used to tune the morphology of the NWs formed. The various types of NWs were probed in depth using transmission electron microscopy (TEM), scanning electron microscopy (SEM), selected area electron diffraction (SAED), and dark field TEM (DFTEM).

show abstract

Section: Ii: Experimentalmentioning

confidence: 99%

Role of Defects and Growth Directions in the Formation of Periodically Twinned and Kinked Unseeded Germanium Nanowires

Geaney

Dickinson

Weng

et al. 2011

Crystal Growth & Design

View full text Add to dashboard Cite

show abstract

“…A variety of techniques -both physical and chemical -have been used to prepare nanoparticles, nanowires, nanobelts, etc. [9][10][11][12][13]. Silicate glasses have a structure consisting of a lot of physically void spaces.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of nanocomposites with iron core–iron oxide shell structure

Basu

Chakravorty

2006

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

“…This group of organic solvents permits Ge nucleation in a non-pressurised system, facilitating Ge precursor decomposition and nanowire growth [ 173 , 174 ]. A large number of studies on the solution-phase synthesis of Ge nanowire have focussed on self-seeded approaches for nanowire growth [ 166 , 175 ]. A colloidal synthetic approach has been used for the growth of nanocrystals and nanorods in HBP solvents.…”

Section: Self-seeded Germanium Nanowire Synthesis Methodsmentioning

confidence: 99%

“…Zaitseva et al [ 175 ] presented a detail study on the influence of reaction pressure and solvent type on the growth of self-seeded Ge nanowires. Ge nanowire formation from the Ge precursor tetraethylgermane (TEG) at a temperature of ~400 °C and pressure of ≤5 MPa was compared to reactions performed under vacuum and ambient pressure conditions.…”

Section: Self-seeded Germanium Nanowire Synthesis Methodsmentioning

confidence: 99%

“…Zaitseva et al [ 175 ] laid the groundwork by proposing a general growth mechanism for the self-seeded growth of Ge nanowires which was useful in explaining subsequent research on the self-seeded grown of Ge nanowires in solvent phase. They proposed the formation of an organic droplet, analogous to the liquid catalyst seed used in VLS growth, which aids the growth of self-seeded nanowires.…”

Section: Growth Mechanism For Self-seeded Ge Nanowiresmentioning

confidence: 99%

See 1 more Smart Citation

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

2021

View full text Add to dashboard Cite

Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the most popular for Ge nanowire growth. However, to fully utilise the potential of Ge nanowires, it is important to explore and understand alternative and functional growth paradigms such as self-seeded nanowire growth, where nanowire growth is usually directed by the in situ-formed catalysts of the growth material, i.e., Ge in this case. Additionally, it is important to understand how the self-seeded nanowires can benefit the device application of nanomaterials as the additional metal seeding can influence electron and phonon transport, and the electronic band structure in the nanomaterials. Here, we review recent advances in the growth and application of self-seeded Ge and Ge-based binary alloy (GeSn) nanowires. Different fabrication methods for growing self-seeded Ge nanowires are delineated and correlated with metal seeded growth. This review also highlights the requirement and advantage of self-seeded growth approach for Ge nanomaterials in the potential applications in energy storage and nanoelectronic devices.

show abstract

Unseeded growth of germanium nanowires by vapor-liquid-solid mechanism

Cited by 26 publications

References 19 publications

Role of Defects and Growth Directions in the Formation of Periodically Twinned and Kinked Unseeded Germanium Nanowires

Role of Defects and Growth Directions in the Formation of Periodically Twinned and Kinked Unseeded Germanium Nanowires

Optical properties of nanocomposites with iron core–iron oxide shell structure

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

Contact Info

Product

Resources

About