Untersuchungen der elektrischen und lichtelektrischen Leitf�higkeit d�nner Indiumoxydschichten

Rupprecht, Georg

doi:10.1007/bf01374559

Cited by 134 publications

(50 citation statements)

References 6 publications

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“…(111) resolved by scanning tunnelling microscopy. Adapted with permission from [28] One of the earliest measurements of optical absorption in an In 2 O 3 thin film was performed in 1954 by Rupprecht [31]. The film used in this work was prepared by deposition of In metal on a quartz surface, followed by thermal oxidation in air.…”

Section: The Bulk Bandgapmentioning

confidence: 99%

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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This article reviews the impact of defects and doping on the surface electronic structure of indium oxide, a wide gap oxide semiconductor which under degenerate doping becomes an important transparent conducting material. Topics covered include recent evidence for carrier accumulation at In 2 O 3 surfaces when there is a low bulk doping level and the profound effects of doping on core and valence photoemission spectra. The importance of molecular beam epitaxy in growth of single crystal samples is emphasised. IntroductionTransparent conducting oxides (TCOs) combine the usually orthogonal properties of optical transparency in the visible region with a high electrical conductivity [1][2][3][4]. TCOs already find widespread application as the window electrode in display devices including liquid crystal displays and electroluminescent display devices. A TCO electrode is also an essential component in many designs of solar cell [5,6]. In addition there is a growing interest in "transparent electronics" where TCO materials are employed in a more active role, for example in light emitting diodes [7] or lasers operating in the ultraviolet regime. The TCO market is worth around $1.6 billion per annum, with upward of 80 % of this sum based on LCD displays. Indium oxide (In 2 O 3 ) is amenable to n-type doping with Sn to give a prototype TCO usually-but somewhat misleadingly-referred to as indium tin oxide or ITO. At present ITO dominates the TCO market as the material offers a better combination of conductivity and transparency than alternatives such as doped ZnO or SnO 2 . In principle, doped CdO could achieve better performance [8], but Cd is highly toxic. Despite some recent reports of respiratory disease and even deaths [9] among workers in the ITO industry, indium is generally regarded as relatively

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Section: The Bulk Bandgapmentioning

confidence: 99%

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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“…In203 is an n-type semiconducting material with a direct gap of about 3.6 eV and an indirect band gap of about 2.6eV [5]. In its common form it is a yellow powder but can be prepared as a thin film which is transparent in the visible spectrum.…”

Section: Introductionmentioning

confidence: 99%

The optical absorption edge in amorphous thin films of MoO3-In2O3

Anwar

Hogarth

1989

J Mater Sci

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A study of the effects of changes in composition, film thickness, substrate deposition temperature and annealing on the optical properties of MoO3-1n203 is presented. The results are found to be compatible with the reduction in the value of optical energy gap of these materials as the molar fraction of In203 in the MoO 3 thin film increases. This decrease of optical gap may be attributed to the incorporation of In(Ill) ions in an MoO 3 lattice. The decrease in optical band gap with increasing thickness may be interpreted in terms of the incorporation of oxygen vacancies which are also believed to be the source of conduction electrons in the MoO3-1n203 complex. The decrease of band gap with increasing substrate temperature may be attributed to the enhanced ordering of the samples and the decrease of band gap with annealing may be attributed to a reduction in the concentration of lattice imperfections.

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“…In particular, firms Sanyo/Panasonic already use TCO films in industrial production of silicon SC based on the junction а-Si:H/Si(crystalline), which reach the efficiency up to 25.6% [1]. One of the diverse TCO materials is indium oxide doped with tin ITO that, starting from 1954, when ITO film with suitable combination of optical transparence and electrical conductivity was prepared [2], is actively investigated with the aim of large-scale usage [3,4].…”

Section: Introductionmentioning

confidence: 99%

Influence of nanostructured ITO films on surface recombination processes in silicon solar cells

Kostylyov¹,

Lashkaryov²

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells.Keywords: solar cell, internal quantum efficiency, external quantum efficiency, velocity of surface recombination, spectral dependence, isotype heterojunction.

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Untersuchungen der elektrischen und lichtelektrischen Leitf�higkeit d�nner Indiumoxydschichten

Cited by 134 publications

References 6 publications

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Dopant and Defect Induced Electronic States at In2O3 Surfaces

The optical absorption edge in amorphous thin films of MoO3-In2O3

Influence of nanostructured ITO films on surface recombination processes in silicon solar cells

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