Untersuchungen der Teilsysteme: Aluminium-TiSi2, -ZrSi2, -MoSi2 und -WSi2

Nowotny, H.; Huschka, H.

doi:10.1007/bf00901336

Cited by 15 publications

(5 citation statements)

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“…Hexagonal W(Si, AI)2 without any A1 corresponds to the metastable low-temperature phase of tetragonal WSi2 (ll). The same isomorphic structures exist also in MoSt2 with its tetragonal and metastable hexagonal phases (12,13). Therefore, hexagonal W(Si, A1)2 has to be considered as a silicide-related structure.…”

Section: Discussionmentioning

confidence: 97%

“…Hexagonal W(Si, Alh could be formed by substitution of Si with A1 atoms in tetragonal WSi2, resulting in a new crystal structure (12) that is hard to distinguish from tetragonal WSi2 by SAD in the presence of 3-W (as shown in Fig. 4b).…”

Section: Discussionmentioning

confidence: 99%

“…The buffer layer formed by reacting Si (100) substrate with the hydrocarbon-H2 gas system was identified to be single-crystalline ~-SiC with stacking faults (11). Small grains (-<10nm) with small angle misorientations were observed in the plan-view micrograph of the buffer layer (12).…”

Section: H Yamaguchi and Y Shichimentioning

confidence: 99%

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Chemical Vapor Deposited WSi x Intermediate Layer for W Vias on Al Studied by Transmission Electron Microscopy

Mitwalsky

Bertagnolli

Eckers

1991

J. Electrochem. Soc.

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For via hole~filling in very-and ultra-large-scale integrated application, a CVD-W process with an additional, intermediate chemical vapor deposited WSi~ layer between A1 and W was successfully applied. The approximately 150 nm thick WSix layer was characterized in detail by analytical transmission electron microscopy. After various heat-treatments, the crystalline fraction of the mainly amorphous WSi= consists predominantly of ~-W and/or hexagonal W(Si, A1)2. With increasing thermal load A1 diffuses into the WSi~ resulting in the formation of Kirkendall pores.

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Section: Discussionmentioning

confidence: 97%

Section: Discussionmentioning

confidence: 99%

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Chemical Vapor Deposited WSi x Intermediate Layer for W Vias on Al Studied by Transmission Electron Microscopy

Mitwalsky

Bertagnolli

Eckers

1991

J. Electrochem. Soc.

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“…В 50 -60-х годах ХХ столетия появились работы по высокотемпературным силицидным покрытиям для защиты тугоплавких металлов от высокотемпературной газовой коррозии [44][45][46] и для защиты лопаток газотурбинных двигателей [47]. Несколько позже вышли публикации по высокотемпературным прочным композитам на основе MoSi 2 , [48,49] в частности с добавками алюминия [50,51], оксида алюминия [52] и карбида кремния [53].…”

Section: использование высокотемпературных силицидных материаловunclassified

High-Temperature Silicides: Properties and Application

Lytovchenko

2016

East Eur. J. Phys.

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The overview presents a historic retrospective and current state of research of structure, properties and application of hightemperature silicide materials in science and engineering. These materials, particularly construction and functional materials based on or involving silicide refractory metals, are a most important alternative class of materials which adequately complete with special alloys, intermetallic metals, and ceramics that are traditionally used at high (above 15000C) temperatures in oxidizing and other aggressiveenvironments. The paper analyzes the data available on constitutional diagrams, particularly on molybdenum-silicon and tungsten-silicon systems. Also, it shows differences in descriptions of diagrams given by different authors and considers some crystallochemical and physical properties of some high-temperature silicides. The paper reviews areas of application of high-temperature silicide materials of various types (layered and multiple-phase composites, consolidated powders, film structure, three-dimensional materials), and presents details of the challenges encountered in the process of creation and application of high-temperature protectingsilicide coatings, as well as possible ways to improve their performance. It is noted that lack of unified approach to presentation and correlation of research results as well as to description of real performance of materials is a substantial problem in creating new high-temperature silicide materials.

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“…The communality of these structures was known 52,53 long ago. Yet, it had been reported quite early that such changes occur just as well by the substitu- tion of aluminum to silicon: thus an alloy 55,56 of Mo(Si,Al) 2 has the C40 structure of TaSi 2 , and further addition of aluminum up to a composition 56,57 corresponding to Mo(Si,Al-35,65) 2 yields the C54 structure of TiSi 2 . 5 and stoichiometric composition (1/2).…”

Section: Phase Interfaces Stacking and Stacking Faultsmentioning

confidence: 99%

Silicide interfaces in silicon technology

d’Heurle¹

1998

Journal of Elec Materi

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Untersuchungen der Teilsysteme: Aluminium-TiSi2, -ZrSi2, -MoSi2 und -WSi2

Cited by 15 publications

References 0 publications

Chemical Vapor Deposited WSi x Intermediate Layer for W Vias on Al Studied by Transmission Electron Microscopy

Chemical Vapor Deposited WSi x Intermediate Layer for W Vias on Al Studied by Transmission Electron Microscopy

High-Temperature Silicides: Properties and Application

Silicide interfaces in silicon technology

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