Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure

Jin, S. R.; Sweeney, S. J.; Tomić, Stanko; Adams, A.R.; Riechert, H.

doi:10.1063/1.1566468

Cited by 12 publications

(5 citation statements)

References 16 publications

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“…2). Several mechanisms could contribute to this phenomenon, for example, a less efficient in-well absorption of the pump (the overall reflectivity of the structure at the pump wavelength increases from 20% at 10 C to 45% at 90 C), an increase in the Auger recombination [16], or hole leakage [17].…”

Section: Vcselmentioning

confidence: 98%

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

Calvez

Hopkins

Smith

et al. 2004

Journal of Crystal Growth

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Section: Vcselmentioning

confidence: 98%

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

Calvez

Hopkins

Smith

et al. 2004

Journal of Crystal Growth

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“…The devices were positioned in a spring clip in a piston-in-cylinder high pressure system as described elsewhere. 9 The lasers were driven by a pulsed source with 500-ns-long pulses at a repetition rate of 10 kHz to avoid internal heating. A set of 1.5-mm-long ascleaved InGaAs/ InP laser diodes emitting at 1.5 m was investigated.…”

mentioning

confidence: 99%

Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature

Massé

Adams

Sweeney

2007

Applied Physics Letters

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The band gap dependencies of the threshold current and its radiative component are measured using high pressure techniques. Detailed theoretical calculations show that the band gap dependence of the internal losses plays a significant role in the band gap dependence of the radiative current. Temperature dependence measurements show that the radiative current accounts for 20% of the total threshold current at room temperature. This allows us to determine the pressure dependence of the non-radiative Auger recombination current, and hence to experimentally obtain the variation of the Auger coefficient C with band gap. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2722041͔The relative importance of different carrier recombination processes occurring in semiconductor diode lasers is strongly dependent on the band structure, material quality and laser geometry ͑e.g., cavity length, facet coatings, etc.͒. While a small amount of radiative recombination via spontaneous emission is desirable ͑to seed the stimulated emission process͒, other nonradiative recombination paths may contribute to the laser threshold current and are detrimental to the performance of the devices. For InGaAs͑P͒ / InP devices operating over the telecommunications range ͑1.3-1.6 m͒, it is known that Auger recombination plays an important role and is responsible for their high temperature sensitivity [1][2][3][4] . In order to understand these limiting processes and consequently to improve the performance of the devices, it is necessary to separate the contribution of the different recombination current paths. 1-6 Hydrostatic pressure is an ideal tool to investigate the current paths and their variation with band gap, and hence operating wavelength. In long wavelength semiconductor multiple quantum well lasers where leakage currents are small, it has been shown 1,5 that the threshold current I th can be written as the sum of monomolecular ͑ϰn͒, radiative ͑ϰn 2 ͒, and Auger ͑ϰn 3 ͒ recombination currents, where n is the carrier density at threshold ͑assuming that the hole and electron densities are equal͒. Thus I th = eV͑An + Bn 2 + Cn 3 ͒ where e is the electronic charge, V is the volume of the active region, and A, B, and C are the monomolecular, radiative, and Auger recombination coefficients, respectively. Good growth quality means that the monomolecular current is negligible in the InGaAs devices studied here. 1,5 The relative magnitudes of the remaining radiative and nonradiative currents have been experimentally studied via temperature and high pressure measurements. 1,5 Previous analyses were based on the theoretical assumption that for an ideal quantum well laser, the radiative current is proportional to the square of the band gap: I rad ϰ E g 2 , where E g is the band gap 7 although this had not been experimentally verified at room temperature. The pressure dependence of the radiative current has already been verified at low temperatures using a helium gas pressure system. 8 Since at cryogenic temperatures ͑T Ͻ 120 K͒ all of the inje...

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“…If 0 a a > , then it is called tensile strain and if 0 a a < , then it is called compressive strain. The analytical expression for strain in the perpendicular direction is [6] are Luttinger parameters. For calculating the conduction sub-bands and valence sub-bands of the quantum well region of a VCSEL, the well known time independent Schrodinger's equation [9] has been used.…”

Section: Computation Of Energy Sub-bands In the Quantum Wellsmentioning

confidence: 99%

“…It has been found that the defect-related nonradiative recombination is significantly high in InGaAsN material due to the difficulty in the growth of high quality nitride compounds [6].…”

Section: Introductionmentioning

confidence: 99%

Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR

Islam¹,

Islam²

2014

AJOP

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In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.

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Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure

Cited by 12 publications

References 16 publications

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature

Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR

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