Oxide Ultrathin Films 2011
DOI: 10.1002/9783527640171.ch4
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Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit

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Cited by 2 publications
(2 citation statements)
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“…Thus, a gas-phase approach as in CO 2 GR allows the provision of water to be limited, thus favoring the formation of multicarbon species. , This multicarbon selectivity is possible by controlling the potential to limit side reactions of protons or electron recombination and, at the same time, to avoid the excessive reduction of the FeOOH, which would lead to a selective state for the HER. We also consider that the extent of the dissolution of atomic C should be limited to the topmost atomic layers of the Fe phase to prevent the formation of a more stable carbide, which would be active for the HER . A partially reduced thin layer of Fe­(II) oxide in which lattice O atoms coexists with C atoms is an ideal phase where the N functionalization plays a crucial role in both stabilizing this structure and preventing phase transformation into HER active phases.…”
Section: Resultssupporting
confidence: 89%
“…Thus, a gas-phase approach as in CO 2 GR allows the provision of water to be limited, thus favoring the formation of multicarbon species. , This multicarbon selectivity is possible by controlling the potential to limit side reactions of protons or electron recombination and, at the same time, to avoid the excessive reduction of the FeOOH, which would lead to a selective state for the HER. We also consider that the extent of the dissolution of atomic C should be limited to the topmost atomic layers of the Fe phase to prevent the formation of a more stable carbide, which would be active for the HER . A partially reduced thin layer of Fe­(II) oxide in which lattice O atoms coexists with C atoms is an ideal phase where the N functionalization plays a crucial role in both stabilizing this structure and preventing phase transformation into HER active phases.…”
Section: Resultssupporting
confidence: 89%
“…The thickness used in this work (1.1nm) falls into the range of native oxide thickness with corresponding reasonable bandgap of 4.9eV, in agreement with literature values. Besides, bandgap of bulk Al 2 O 3 was reported to be around 7∼9eV, 24 much higher than that of the thin oxide film studied in this work. 2.…”
Section: Band Gap Of Thin α-Al 2 O 3 Layer-it Has Previously Been Rep...mentioning
confidence: 53%