Unusual Quantum Transport Mechanisms in Silicon Nano-Devices

Abstract

Silicon-based materials have been the leading platforms for the development of classical information science and are now one of the major contenders for future developments in the field of quantum information science. In this short review paper, while discussing only some examples, I will describe how silicon Complementary-Metal-Oxide-Semiconductor (CMOS) compatible materials have been able to provide platforms for the observation of some of the most unusual transport phenomena in condensed matter physics.

Quantum Transport in Mesoscopic Systems

“…A celebrated phenomenon is the Kondo effect, where the unpaired spin of an electron localized inside a quantum dot forms, at a low temperature, a many-body singlet with the spin density arising from conduction electrons that propagate in the leads attached to the dot. Tettamanzi [ 18 ] review the Kondo and the Kondo–Fano effects in silicon nanostructures, taking into account correlations between pseudospins belonging to different degeneracy points in the conduction bands. Simultaneous fluctuations in both the spin and pseudospin degrees of freedom give rise to higher symmetry Kondo states.…”