Unveiling Electronic Correlation and the Ferromagnetic Superexchange Mechanism in the van der Waals Crystal 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>CrSiTe</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Zhang, Jiaxin; Cai, Xiaochan; Xia, Wei; Liang, Aiji; Huang, Junwei; Wang, Chengwei; Yang, Lexian; Yuan, H. Q.; Chen, Yulin; Zhang, Shilei; Guo, Yanfeng; Liu, Zhongkai; Li, Gang

doi:10.1103/physrevlett.123.047203

Cited by 65 publications

(64 citation statements)

References 39 publications

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“…The identical dispersive features at 30, 50 and 100 K indicate that the valence band structure of Cr 2 Si 2 Te 6 remains unchanged with temperature variation and keeps consistency from the FM to paramagnetic (PM) phase, although there is a slight rigid shift to deeper binding energy in the spectrum taken at 30 K due to the charging effect. From the broad range dispersion along the Γ−K direction, we could identify both dispersive feature near the valence band maximum (VBM) and rather flat bands at~1.5 eV below the VBM, consistent with the previous report [28]. This flat band leads to a sharp and localized electronic DOS, as indicated by the energy distribution curve (EDC) intensity derived from 30 K ARPES data (Fig.…”

Section: Electrical and Magnetic Property Characterizationssupporting

confidence: 90%

Coexistence of large positive and negative magnetoresistance in Cr2Si2Te6 ferromagnetic semiconductor

Zhou

Bai

et al. 2021

Sci. China Mater.

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Magnetoresistance (MR) phenomenon couples the electron transport with magnetic field, which has been at the forefront of condensed matter physics and materials science. Large-MR behaviors are of particularly importance for magnetic sensor and information memory applications, and their scarcity has aroused intensive research. Moreover, due to the different physical origins, combination of large positive and negative MR (pMR and nMR) in one single compound has rarely been reported. In present work, we achieved a coexistence of large pMR and nMR in Cr 2 Si 2 Te 6 ferromagnetic semiconductor single crystal with different field configurations. Specifically, a large nMR of about −60% was obtained under the in-plane field, while a large pMR higher than 1000% took over in the out-of-plane direction. We attribute this field direction-sensitive dualistic large MR behavior to the competition and cooperation effect from the ferromagnetic interaction, orbital scattering and electronic correlation that coexist in Cr 2 Si 2 Te 6 , which contribute to nMR, pMR, and nMR, respectively, in dominated temperature and field ranges, and show different weights under different field directions. The elucidated multiple MR mechanism in this ferromagnetic semiconductor will shed light on the pursuit of coexistence of large pMR and nMR for field-sensitive device applications.

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Section: Electrical and Magnetic Property Characterizationssupporting

confidence: 90%

Coexistence of large positive and negative magnetoresistance in Cr2Si2Te6 ferromagnetic semiconductor

Zhou

Bai

et al. 2021

Sci. China Mater.

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“…[69] In parallel, homologous studies on CrSiTe 3 unveil the intimate relationship between the superexchange coupling and the electronic structure. [70] At the same time, the strong electronic correlations in CrSiTe 3 weaken interlayer exchange, resulting in uncertain FM or AFM interlayer exchange coupling, which needs further experimental verifications. Moreover, the presence of strong spinphonon coupling has been confirmed both experimentally and theoretically in CrGeTe 3 and CrSiTe 3 , [71][72][73][74][75] suggesting the possible modulation of magnetism through pressure or strain.…”

Section: Transition Metal Phosphorous Tri-chalcogenidesmentioning

confidence: 99%

van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics

2020

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van der Waals (vdW) materials exhibit great potential in spintronics, arising from their excellent spin transportation, large spin–orbit coupling, and high‐quality interfaces. The recent discovery of intrinsic vdW antiferromagnets and ferromagnets has laid the foundation for the construction of all‐vdW spintronic devices, and enables the study of low‐dimensional magnetism, which is of both technical and scientific significance. In this review, several representative families of vdW magnets are introduced, followed by a comprehensive summary of the methods utilized in reading out the magnetic states of vdW magnets. Thereafter, it is shown that various electrical, mechanical, and chemical approaches are employed to modulate the magnetism of vdW magnets. Finally, the perspective of vdW magnets in spintronics is discussed and an outlook of future development direction in this field is also proposed.

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“…One can recognize several dispersive bands, e.g., a relatively flat band at the binding energy (E B ) of ≈1.8 eV and a dispersive holelike band topped at E B ≈ 0.5 eV at the point. According to the first-principles band-structure calculations [25,26], the former is ascribed to the Cr 3d orbital responsible for the ferromagnetism while the latter to the Te 5p z orbital that forms a valence-band maximum separated by a band gap (>0.5 eV) from the conduction-band minimum. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van der Waals ferromagnet Cr2Si2Te
Kato
¹
,
Sugawara
²
,
Ito
³

et al. 2020
Phys. Rev. Materials
3
0
1
0
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We investigated the Dirac-cone state and its modulation when an ultrathin film of topological insulator Bi 2 Se 3 was epitaxially grown on a van der Waals ferromagnet Cr 2 Si 2 Te 6 (CST) by angle-resolved photoemission spectroscopy. We observed a gapless Dirac-cone surface state in six quintuple-layer (6QL) Bi 2 Se 3 on CST, whereas the Dirac cone exhibits a gap of 0.37 eV in its 2QL counterpart. Intriguingly, this gap is much larger than those for Bi 2 Se 3 films on Si(111). We also revealed no discernible change in the gap magnitude across the ferromagnetic transition of CST, suggesting the very small characteristic length and energy scale of the magnetic proximity effect. The present results suggest a crucial role of interfacial coupling for modulating Dirac electrons in topological-insulator hybrids.

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Unveiling Electronic Correlation and the Ferromagnetic Superexchange Mechanism in the van der Waals Crystal CrSiTe3

Cited by 65 publications

References 39 publications

Coexistence of large positive and negative magnetoresistance in Cr2Si2Te6 ferromagnetic semiconductor

Coexistence of large positive and negative magnetoresistance in Cr2Si2Te6 ferromagnetic semiconductor

van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics

Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van der Waals ferromagnet Cr2Si2Te
Kato
¹
,
Sugawara
²
,
Ito
³

et al. 2020
Phys. Rev. Materials
3
0
1
0
View full text Add to dashboard Cite

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Unveiling Electronic Correlation and the Ferromagnetic Superexchange Mechanism in the van der Waals Crystal CrSiTe3

Cited by 65 publications

References 39 publications

Coexistence of large positive and negative magnetoresistance in Cr2Si2Te6 ferromagnetic semiconductor

Coexistence of large positive and negative magnetoresistance in Cr2Si2Te6 ferromagnetic semiconductor

van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics

Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van der Waals ferromagnet Cr2Si2TeKato1, Sugawara2, Ito3 et al. 2020Phys. Rev. Materials3010View full textAdd to dashboardCite

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Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van der Waals ferromagnet Cr2Si2Te
Kato
¹
,
Sugawara
²
,
Ito
³

et al. 2020
Phys. Rev. Materials
3
0
1
0
View full text Add to dashboard Cite