Unveiling interface interaction assisted broadband photoresponse of epitaxial 2D Bi₂O₂Se on perovskite oxides

Abstract

Bi2O2Se has established itself as a revolutionary two-dimensional (2D) semiconductor owing to its superior electric, optoelectric and thermoelectric properties. The structural compatibility between Bi2O2Se and perovskite oxides makes the investigation...

Broadband photoresponse in plasmon-enhanced Ga-doped ZnO

“…The hot end carriers migrate to the cold end as a result of this field, determining the direction of the current. Our results are consistent with previous reports on the PTE phenomenon, 12,46–48 which confirms that the PTE effect plays a role in the observed photoresponse.…”

“…The hot end carriers migrate to the cold end as a result of this field, determining the direction of the current. Our results are consistent with previous reports on the PTE phenomenon, 12,[46][47][48] which confirms that the PTE effect plays a role in the observed photoresponse. The incorporation of Ga atoms not only amplifies the PTE effect of ZnO but also extends it to the visible and near-infrared bands, as shown in Fig.…”

Growth of Multilayer WSe2/Bi2O2Se Heterostructures for Photodetection without Lithography

“…All of these binding energies of each spectrum could be assigned to the elements Bi, O, and Se of Bi 2 O 2 Se; this indicates that the chemical bonding characteristics of our Bi 2 O 2 Se thin film coincide with those reported in previous studies. 55 In addition, the XPS spectra show the peaks corresponding to each element, namely, Bi 4f, O 1s, W 4f, and Se 3d, for the WSe 2 /Bi 2 O 2 Se heterostructure (Figure 3d− g); these are also consistent with those in previous reports. 35 However, there were some differences compared with the spectra of the single Bi 2 O 2 Se thin film.…”

“…XPS spectra also showed the O 1s peaks at 530.9 and 529.6 eV caused by Bi 2 O 3 , as well as the doublet peaks corresponding to Se 3d at 53 and 53.8 eV. All of these binding energies of each spectrum could be assigned to the elements Bi, O, and Se of Bi 2 O 2 Se; this indicates that the chemical bonding characteristics of our Bi 2 O 2 Se thin film coincide with those reported in previous studies . In addition, the XPS spectra show the peaks corresponding to each element, namely, Bi 4f, O 1s, W 4f, and Se 3d, for the WSe 2 /Bi 2 O 2 Se heterostructure (Figure d–g); these are also consistent with those in previous reports .…”

Regulated self-powered photoresponse properties and irradiance-adaptable behavior in ferroelectric SrTiO3/TiO2 heterojunction photodetectors

“…33 The photocurrent polarity is reversed under 420 nm due to the change in the carrier transmission direction for STO/TiO 2 PDs. As an important parameter to evaluate the performance of PDs, the responsivity (R) can be calculated using Eqn (1), 34 where I p and I d represent the photocurrent and dark current respectively, P is the optical power density, and A is the effective irradiation area. A small dark current and a large photocurrent are helpful in improving the R of the device.…”