Unveiling Surface Recombination Velocity Influence on the Device Characteristics for the Formamidinium Perovskite Solar Cell

Saeed, Faisal; Rehman, Tauseef Ur; Zohaib, Abdullah; Ahmad, Feroz; Khan, Muhammad Haseeb; Khan, Mansoor Ahmad; Tauqeer, Haider Ali; Idrees, Asad

doi:10.3390/engproc2022020004

Cited by 5 publications

(4 citation statements)

References 17 publications

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“…As depicted in the figure the maximum generation was seen at 10 22 cm −3 s −1 as the absorption of the photons at this region is higher than in other regions. Hence it is concluded from this study that the maximum generation corresponds to the maximum number of electrons at that particular position [26][27][28][29]. On the other hand, the recombination rates are opposite to the generation rate.…”

Section: Gr Profilementioning

confidence: 81%

Improving the efficiency of ZnO/WS₂/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation

Dakua¹,

Panda

2023

Phys. Scr.

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With a high absorption coefficient and tunable bandgap CZTS (Copper Zinc Tin Sulfide) makes it suitable for photovoltaic applications. Present paper deals with the simulation and modeling of CZTS-based solar cells using tungsten disulfide (WS2) as the buffer layer and CZTS2 as the back surface field (BSF) layer to study the performance of the solar cell. Considering different physical and geometrical parameters such as thickness, acceptor density, interfacial defect density, and metal contact work functions the device calibration has been done. The temperature is varied from 300 K to 400 k to study the impact on device performance. The C-V and 1/C2 plot is presented to calculate the built-in voltage for the device. The series (Rs) and shunt (Rsh) resistance of 1 and 106 ohm.cm2 were kept throughout the simulation. The optimized thickness for the absorber, BSF, buffer, and window layers are 800 nm, 140 nm, 30 nm, and 90 nm respectively. The obtained results are validated using the experimental results available in the literature. Varying the values of different parameters, the optimal efficiency of 26 % was reported in this work. Contrary to conventional solar cells, which contain expensive and toxic elements, WS2 may be a good option as a buffer layer in CZTS solar cells.

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Section: Gr Profilementioning

confidence: 81%

Improving the efficiency of ZnO/WS₂/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation

Dakua¹,

Panda

2023

Phys. Scr.

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“…In figure 3(a), J sc increases steeply up to 80 μm (37.60 mA cm −2 ) thickness and then the growth rate of J sc slowed down. Since a thicker wafer absorbs more photons to generate more excitons, hence J sc increases dramatically [86][87][88][89][90][91]. With increasing thickness of c-Si, the series resistance of the device was raised thus, resulting in the decrease of V oc and FF as shown in figures 3(b) and (c), respectively [91].…”

Section: Influence Of Crystalline Silicon C-si Thicknessmentioning

confidence: 96%

“…equation (7) depicts that when S it increases (D it increases), V oc decreases rapidly. Saeed et al, also has presented a well-defined relation between S it and V oc [86]. Their formulations can be summarized according to the equation (9).…”

Section: Influence Of Interface States At C-si/tio2mentioning

confidence: 99%

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Bagade,

Patel

2023

Phys. Scr.

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Carrier selective solar cell has become one of the hot spots in the area of Si solar cell. The proposed architecture FTO/TiO2/c-Si/i-a-Si:H/Cu2O/back contact studied through simulation demonstrates a power conversion efficiency of 20.03%. This study is the first to report detailed exploration of effect of the conduction band density of states on the efficiency of Si solar cell. Through optimization, the conduction band density of state (1017 cm-3) drastically increases the power conversion efficiency from 18% (at 1021 cm-3) to 21.25% (at 1017 cm-3) i.e., an improvement of 18% relatively. Along with this, the parameters like absorber layer thickness, absorber’s defect density, thickness of electron transport layer and interface defect density are also optimized. Moreover, the charge transport properties and the impact of the Schottky barrier height at c-Si/TiO2 interface on band alignment is studied. After optimization of various physical parameters such as thickness (100 μm), conduction band density of states (1017 cm-3) and defect concentration (1010 cm−3) of c-Si layer, thickness of TiO2 layer (20 nm) and interface defect density at c-Si/TiO2 junction (1010 cm−2), a short-circuit current of 38.11 mA cm−2, open-circuit voltage of 0.84 V, fill factor of 85.99% is obtained, leading to an enhanced theoretical power conversion efficiency of 27.77%.

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“…The process of photo-excitation in solar cells produces photo-generated electrons which then generate electricity. However, an unequivocal limitation exists that is related to associated losses, such as transmission losses, thermalization, and recombination losses, 1 which lowers the overall efficiency of the cell. 2 Researchers worldwide have been working on solar cell technology to optimize the cell performance; this is achieved by ruling out the causes of low output, which is accomplished through engineering of both the materials and the design structures.…”

Section: Introductionmentioning

confidence: 99%

Fourth-generation solar cells: a review

Rehman,

Syed,

Khanam

et al. 2023

Energy Adv.

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Unveiling Surface Recombination Velocity Influence on the Device Characteristics for the Formamidinium Perovskite Solar Cell

Abstract: This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).

Cited by 5 publications

References 17 publications

Improving the efficiency of ZnO/WS₂/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation

Improving the efficiency of ZnO/WS₂/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Fourth-generation solar cells: a review

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Unveiling Surface Recombination Velocity Influence on the Device Characteristics for the Formamidinium Perovskite Solar Cell

Abstract: This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).

Cited by 5 publications

References 17 publications

Improving the efficiency of ZnO/WS2/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation

Improving the efficiency of ZnO/WS2/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation

Insight into conduction band density of states at c-Si/TiO2 interface for efficient heterojunction solar cell

Fourth-generation solar cells: a review

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Improving the efficiency of ZnO/WS₂/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation

Improving the efficiency of ZnO/WS₂/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell