Unveiling Temperature-Induced Structural Domains and Movement of Oxygen Vacancies in SrTiO₃ with Graphene

Abstract

Heterointerfaces coupling complex oxides exhibit coexisting functional properties such as magnetism, superconductivity, and ferroelectricity, often absent in their individual constituent. SrTiO 3 (STO), a canonical band insulator, is an active constituent of such heterointerfaces. Temperature-, strain-, or mechanical stress-induced ferroelastic transition leads to the formation of narrow domains and domain walls in STO. Such ferroelastic domain walls have been studied using imaging or transport techniques and, often, the findings are influenced by the choice and interaction of the electrodes with STO. In this work, we use graphene as a unique platform to unveil the movement of oxygen vacancies and ferroelastic domain walls near the STO surface by studying the temperature and gate bias dependence of charge transport in graphene. By sweeping the back gate voltage, we observe antihysteresis in graphene typically observed in conventional ferroelectric oxides. Interestingly, we find features in antihysteresis that are related to the movement of domain walls and of oxygen vacancies in STO. We ascertain this by analyzing the time dependence of the graphene square resistance at different temperatures and gate bias. Density functional calculations estimate the surface polarization and formation energies of layer-dependent oxygen vacancies in STO. This corroborates quantitatively with the activation energies determined from the temperature dependence of the graphene square resistance. Introduction of a hexagonal boron nitride (hBN) layer, of varying thicknesses, between graphene and STO leads to a gradual disappearance of the observed features, implying the influence of the domain walls onto the potential landscape in graphene.

Imaging tunable quantum Hall broken-symmetry orders in graphene

“…2A of the main text (sample STO07) from which we can extract some values of the back-gate voltage at specific filling factors ν. Furthermore, note that the electron-hole asymmetry visible in this gate map stems from the non-linear behavior of STO with the gate voltage [21,[49][50][51]. Since the successive plateaus that form in the gate map correspond to the filling of LLs, the variation of gate voltage to pass through an entire plateau yields a variation in terms of filling factor of ∆ν = ±4.…”