Unveiling the competitive role of etching in graphene growth during chemical vapor deposition

Chen, Shuai; Gao, Junfeng; Bharathi, M. S.; Zhang, Gang; Sorkin, V.; Hariharaputran, Ramanarayan; Zhang, Yong‐Wei

doi:10.1088/2053-1583/aaf59c

Cited by 12 publications

(17 citation statements)

References 51 publications

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“…89 The phenomena were also reported in metal oxides, such as CdO, 90 ZnO, 91 and CeO2, 92 in which the plasmon mode can couple with multiple LO phonon modes and even the surface phonon modes. With the recent discovery on the chiral phonon and its associated angular momentum, [93][94] the plasmon-phonon coupling could have more profound impact in the next generation electronic devices.…”

Section: Plasmon-phonon Interactionmentioning

confidence: 99%

Plasmon-induced carrier polarization in semiconductor nanocrystals

et al. 2018

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Spintronics and valleytronics are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped InO nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

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Section: Plasmon-phonon Interactionmentioning

confidence: 99%

Plasmon-induced carrier polarization in semiconductor nanocrystals

et al. 2018

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“…Additives, such as N 2 , does not affect the shape of graphene flakes [29]. By introducing etching process on their rate catalog, Chen et al [30,31] predicted dodecagon with a hexagonal hole, double hexagonal rings, honeycomb-like networks and nanoribbons. In a recent work [32], they studied graphene growth on Cu (1 1 1) as a function of deposition flux and temperature.…”

Section: Chemical Vapor Depositionmentioning

confidence: 99%

Monte Carlo and Kinetic Monte Carlo Models for Deposition Processes: A Review of Recent Works

Cheimarios

Kokkoris

et al. 2021

Front. Phys.

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Monte Carlo (MC) and kinetic Monte Carlo (kMC) models are widely used for studying the physicochemical surface phenomena encountered in most deposition processes. This spans from physical and chemical vapor deposition to atomic layer and electrochemical deposition. MC and kMC, in comparison to popular molecular methods, such as Molecular Mechanics/Dynamics, have the ability to address much larger time and spatial scales. They also offer a far more detailed approach of the surface processes than continuum-type models, such as the reaction-diffusion models. This work presents a review of the modern applications of MC/kMC models employed in deposition processes.

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“…However, the edge structure and morphology of graphene are mainly regulated by the dynamics of growth rather than by the initial nucleation stage. The kinetic factor mentioned here specifically refers to the adsorption and diffusion rates of the carbon material on the substrate surface and the edge of the nucleation point during the growth process of graphene, and the final structural morphology of graphene is jointly determined by the mutual influence of these two rates [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Chemical vapor deposition growth behavior of graphene

Wang

Fan

et al. 2022

Int J Miner Metall Mater

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The optimized growth parameters of graphene with different morphologies, such as dendrites, rectangle, and hexagon, have been obtained by low-pressure chemical vapor deposition on polycrystalline copper substrates. The evolution of fractal graphene, which grew on the polycrystalline copper substrate, has also been observed. When the equilibrium growth state of graphene is disrupted, its intrinsic hexagonal symmetry structure will change into a non-hexagonal symmetry structure. Then, we present a systematic and comprehensive study of the evolution of graphene with different morphologies grown on solid copper as a function of the volume ratio of methane to hydrogen in a controllable manner. Moreover, the phenomena of stitching snow-like graphene together and stacking graphene with different angles was also observed.

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Unveiling the competitive role of etching in graphene growth during chemical vapor deposition

Cited by 12 publications

References 51 publications

Plasmon-induced carrier polarization in semiconductor nanocrystals

Plasmon-induced carrier polarization in semiconductor nanocrystals

Monte Carlo and Kinetic Monte Carlo Models for Deposition Processes: A Review of Recent Works

Chemical vapor deposition growth behavior of graphene

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