2022
DOI: 10.1021/acsaem.2c01437
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Unveiling the Role of the Metal Oxide/Sn Perovskite Interface Leading to Low Efficiency of Sn-Perovskite Solar Cells but Providing High Thermoelectric Properties

Abstract: Tin halide perovskites (THPs) have appealing optoelectronic properties similar to lead halide perovskites (LHPs). However, THPs coated on metal oxide electrodes in normal-structure perovskite solar cells exhibit poor diode rectification, resulting in poor efficiency. This poor photoelectric performance in n–i–p-based THP solar cells is in contrast with LHP solar cells. We report that this deficient performance of THP solar cells is triggered by the defect states of the metal oxide layer. The defect states of t… Show more

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Cited by 13 publications
(11 citation statements)
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“…To a similar conclusion arrived Baranwal et al measuring the conductivity of tin perovskite thin films growth on top of other metal oxides and attributing to Al 2 O 3 the least oxidising activity. 28 The control over the morphology of the perovskite films has been the most critical strategy for improving the PCE of perovskite PV. 29 Based on the films studied in this work, we expected to observe a strong correlation between the solar cells' morphology and PV performances.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…To a similar conclusion arrived Baranwal et al measuring the conductivity of tin perovskite thin films growth on top of other metal oxides and attributing to Al 2 O 3 the least oxidising activity. 28 The control over the morphology of the perovskite films has been the most critical strategy for improving the PCE of perovskite PV. 29 Based on the films studied in this work, we expected to observe a strong correlation between the solar cells' morphology and PV performances.…”
Section: Resultsmentioning
confidence: 99%
“…To a similar conclusion arrived Baranwal et al measuring the conductivity of tin perovskite thin films growth on top of other metal oxides and attributing to Al 2 O 3 the least oxidising activity. 28 …”
Section: Resultsmentioning
confidence: 99%
“…A recent study systematically investigated the impacts of metal oxide layers on CsSnI 3 films. [ 71 ] The defect states of the metal oxide can trap the electrons from the perovskites, leading to the prompt formation of Sn 4+ , which subsequently increase the carrier density. A PF of 186.58 µW m −1 K −2 was reported at room temperature in CsSnI 3 /ZrO 2 bilayer, better than 148.61 µW m −1 K −2 of the pristine CsSnI 3 thin film.…”
Section: Impacts Of Strategic Doping On Electrical Transportation In ...mentioning
confidence: 99%
“…(A) Timeline and progress in thermoelectric conversion efficiency represented for conventional inorganic 27–31,120–145 and organic thermoelectric materials, 32,146–157 as well as the emerging MHPs 21,22,51,54,67,74,158–162 . The gray dashed line represents the theoretical ZT range of MHPs, 33–36 and the gray dashed box in the bottom right corner indicates the experimental values obtained for MHPs.…”
Section: Introductionmentioning
confidence: 99%
“…Although organic materials, represented by poly(3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS), 32 have also been explored for thermoelectrics, their performance is F I G U R E 1 (A) Timeline and progress in thermoelectric conversion efficiency represented for conventional inorganic [27][28][29][30][31] and organic thermoelectric materials, 32,[146][147][148][149][150][151][152][153][154][155][156][157] as well as the emerging MHPs. 21,22,51,54,67,74,[158][159][160][161][162] The gray dashed line represents the theoretical ZT range of MHPs, [33][34][35][36] limited by their relatively low mobility, limiting their efficiency as thermoelectric generators. On the other hand, MHPs offer a promising alternative for thermoelectric applications due to their unique properties, combining the high mobility 24 of inorganic materials with the ultralow thermal conductivity [19][20][21] and facile processing 4,10,11,14 of organic materials (see Figure 1B), making them a strong ...…”
Section: Introductionmentioning
confidence: 99%