Abstract:Negatively
charged boron vacancies (V
B
–) in
hexagonal boron nitride (hBN) exhibit a broad emission spectrum due
to strong electron–phonon coupling and Jahn–Teller mixing
of electronic states. As such, the direct measurement of the zero-phonon
line (ZPL) of V
B
– has remained elusive. Here, we measure
the room-temperature ZPL wavelength to be 773 ± 2 nm by coupling
the hBN layer to the high-Q nanobeam cavity. As the
wavelength of cavity mode is tuned, we observe a pronounced intensity
resonance, indicating th… Show more
“…Experiments have shown that the V B − defect a packet spectrum peaked at ∼810 nm and zero-phonon line (ZPL) is not observed even at low temperature. 24 Recently, some researchers have shown that the ZPL of V B − is at 773 nm through Purcell enhancement from the photonic crystal cavity, 28 which is consistent with the theoretical results. 29 The electron spin orientation of the V B − defect is out-of-plane relative to the lattice of hBN, and the dipole source orientation of the V B − defect is in-plane.…”
Section: Introductionsupporting
confidence: 76%
“…46 Furthermore, the efficiency of microwave radiation is limited using some of these methods, resulting in low optically detected magnetic resonance (ODMR) contrast. 28,30…”
Among the various kinds of spin defects in hexagonal boron nitride (hBN), the negatively charged boron vacancy (VB-) spin defect that can be site-specifically generated is undoubtedly a potential candidate...
“…Experiments have shown that the V B − defect a packet spectrum peaked at ∼810 nm and zero-phonon line (ZPL) is not observed even at low temperature. 24 Recently, some researchers have shown that the ZPL of V B − is at 773 nm through Purcell enhancement from the photonic crystal cavity, 28 which is consistent with the theoretical results. 29 The electron spin orientation of the V B − defect is out-of-plane relative to the lattice of hBN, and the dipole source orientation of the V B − defect is in-plane.…”
Section: Introductionsupporting
confidence: 76%
“…46 Furthermore, the efficiency of microwave radiation is limited using some of these methods, resulting in low optically detected magnetic resonance (ODMR) contrast. 28,30…”
Among the various kinds of spin defects in hexagonal boron nitride (hBN), the negatively charged boron vacancy (VB-) spin defect that can be site-specifically generated is undoubtedly a potential candidate...
“…Over the years, numerous efforts have been directed toward integrating 2D materials with SiN nanophotonic devices − and plasmonic nanocavities to control their radiative properties. The typical scheme for coupling 2D light sources to a nanophotonic structure is to prefabricate a nanostructure and transfer the 2D material onto it .…”
mentioning
confidence: 99%
“…The hBN nanocavities enable the study of spin qubits in hBN, such as the boron vacancy center. , These qubits exhibit weak optical transitions, making it difficult to observe single or few emitters as opposed to large ensembles. Enhancing emitter-photon coupling via nanophotonic cavities will pave the way for single-qubit control, enabling applications in quantum sensing and quantum information processing.…”
“…16–20 However, the photoluminescence emission from V B − spans in the NIR has no clear indication of zero phonon line (ZPL) even at cryogenic temperature, and the exact electronic level structure and emission dipole of V B − are yet to be understood. Just recently, coupling of the defects into high-quality cavities suggests the ZPL spectral location to be around 770 nm 21 and excited state spectroscopy of the defects revealed the spin states in the excited state. 22–24 Moreover, the defect suffers from low intrinsic brightness and quantum efficiency.…”
Spin-dependent optical transitions are attractive for a plethora of applications in quantum technologies. Here we report on utilization of high quality ring resonators fabricated from TiO2 to enhance the emission...
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