Up to 300 K lasing with GeSn-On-Insulator microdisk resonators

Bjelajac, Andjelika; Gromovyi, Maksym; Sakat, Emilie; Wang, Binbin; Patriarche, G.; Pauc, N.; Calvo, V.; Boucaud, P.; Bœuf, F.; Chelnokov, A.; Reboud, V.; Frauenrath, Marvin; Hartmann, J.-M.; Kurdi, M. El

doi:10.1364/oe.449895

Cited by 25 publications

(18 citation statements)

References 26 publications

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“…Emission of the cavity provide the privilege of inspecting the spectral response from an internal source, overcoming the issues of coupling to an external waveguide and the resulting irrelevant resonant modes. Ge 9 , 10 and 22 – 24 alloys are being investigated as candidate materials for CMOS-compatible light sources. Thus, in our study we have integrated our design on a Ge micro-gear cavity (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Namely, on-chip optical communications with two-dimensions of multiplexing—wave and space division multiplexing—for extremely high data-rates 31 . Consequently, Ge was chosen being a promising CMOS-compatible gain medium 9 , 10 , 25 – 29 , especially with the recent lasing reports of Ge and 22 – 24 , although the cavity concept applies to any waveguiding material. This is evident in the sharp-peak resonances observed in Fig.…”

Section: Discussionmentioning

confidence: 99%

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Chiral germanium micro-gears for tuning orbital angular momentum

Al-Attili

Burt

Zuo

et al. 2022

Sci Rep

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Group IV light sources with vertical emission and non-zero orbital-angular momentum (OAM) promise to unlock many novel applications. In this report, we demonstrate cylindrically symmetrical germanium micro-gear cavities, fabricated by etching a grating around the circumference of standard micro-disks, with periods ranging from 14 to 22. Photoluminescence (PL) measurements were done to identify the confined whispering-gallery modes (WGM). Finite-difference time-domain (FDTD) simulations were conducted to map the resonant modes to their modal profiles and characteristics. Vertical emission of WGMs with non-zero OAM was demonstrated, with a clear dependence of the OAM order ($$\ell$$ ℓ ) on the WGM azimuthal order and the number of micro-gear grating periods. As the chirality, or the direction of rotation, is not controlled in a symmetrical cavity, we propose introducing staircase or triangular-shaped gear periods resulting in an asymmetry. By choosing the diameter, number of periods, and the asymmetrical direction of the gear-teeth, it is possible to generate OAM signals with certain wavelength, OAM order and chirality.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Chiral germanium micro-gears for tuning orbital angular momentum

Al-Attili

Burt

Zuo

et al. 2022

Sci Rep

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“…Another direct literature comparison is the ref. [16] employing a relaxed Ge 0.831 Sn 0.169 laser structure that was fabricated using the same processing as for the present MMD. Both structures relax the residual as-grown compressive strain after layer transfer, but the Sn-content is however near 17 at%Sn in ref.…”

Section: Materials Characterizationmentioning

confidence: 99%

“…[13,15] applied to the GeSn layer with Sn content of ≈17% led to room temperature laser emission. [16,17] Strain engineering, combined with layer transfer technology, is a proven path to improve the lasing performance, thus avoiding the need for excessive Sn content in the active layer. [13,18] Indeed, as presented in this study, by relying on strain engineering one can directly address both the maximum lasing temperature, by tuning the CB directness, and the laser threshold, due to a smaller density of states of the light hole (LH) valence band involved in the transition.…”

Section: Introductionmentioning

confidence: 99%

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Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering

Buca

Bjelajac

Spirito

et al. 2022

Advanced Optical Materials

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The success of GeSn alloys as active material for infrared lasers could pave the way toward a monolithic technology that can be manufactured within mainstream silicon photonics. Nonetheless, for operation on chip, lasing should occur at room temperature or beyond. Unfortunately, despite the intense research in recent years, many hurdles have yet to be overcome. An approach exploiting strain engineering to induce large tensile strain in micro‐disk made of GeSn alloy with Sn content of 14 at% is presented here. This method enables robust multimode laser emission at room temperature. Furthermore, tensile strain enables proper valence band engineering; as a result, over a large range of operating temperatures, lower lasing thresholds are observed compared to high Sn content GeSn lasers operating at similar wavelength.

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Monolithically Integrated Ultra‐Low Threshold GeSn‐on‐Insulator Laser Using Rapid Melting Growth

Liu,

Chen,

Liu

et al. 2024

Laser & Photonics Reviews

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A low‐threshold, monolithically integrated laser on Si is considered a crucial missing ingredient in realizing efficient fully functional photonic‐integrated circuits (PICs). Owing to its compatibility with complementary metal‐semiconductor‐oxide (CMOS) processes, direct bandgap GeSn alloy has recently been studied intensively in hopes of making GeSn lasers the mainstream technology for PICs. However, the inevitable formation of harmful defects in GeSn directly grown on Si has thus far required the use of non‐monolithic approaches such as wafer bonding to obtain high‐quality GeSn layers, preventing the realization of practical, low‐threshold GeSn lasers. Here, ultra‐low threshold lasing in a monolithically‐grown, nearly‐defect‐free GeSn single‐crystal layer is demonstrated. The rapid melting growth method used in this study allows the fabrication of a compact, integrated laser that simultaneously achieves an ideal GeSn gain medium with built‐in tensile strain and an excellent GeSn optical cavity on an insulating layer. The measured threshold is ≈0.52 kW cm−2 under the optical pumping scheme at 10 K, which is the lowest among all the reported GeSn lasers. This work provides a new solution for building a truly CMOS‐compatible, monolithic laser that can complete the device library of the mature Si photonics foundries.

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Up to 300 K lasing with GeSn-On-Insulator microdisk resonators

Cited by 25 publications

References 26 publications

Chiral germanium micro-gears for tuning orbital angular momentum

Chiral germanium micro-gears for tuning orbital angular momentum

Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering

Monolithically Integrated Ultra‐Low Threshold GeSn‐on‐Insulator Laser Using Rapid Melting Growth

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