2022
DOI: 10.1002/smll.202200563
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Upconversion under Photon Trapping in ZnO/BN Nanoarray: An Ultrahigh Responsivity Solar‐Blind Photodetecting Paper

Abstract: Solar‐blind photodetectors (PDs) are widely applicable in special, military, medical, environmental, and commercial fields. However, high performance and flexible PD for deep ultraviolet (UV) range is still a challenge. Here, it is demonstrated that an upconversion of photon absorption beyond the energy bandgap is achieved in the ZnO nanoarray/h‐BN heterostructure, which enables the ultrahigh responsivity of a solar‐blind photodetecting paper. The direct growth of ultralong ZnO nanoarray on polycrystalline cop… Show more

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Cited by 10 publications
(8 citation statements)
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“…Two peaks at 1358 and 1361 cm −1 can be fitted, which should be respectively attributed to the D band from disordered carbons with the vibration of sp 3 defects and E 2g band vibration peak of BN. 34,35 The characteristic D and G bands strongly demonstrate the existence of carbon in all resultant BN@NC hybrids. The intensity ratio of the D to G band (I D /I G ) is calculated to evaluate the disorder and defects of carbon.…”
Section: Resultsmentioning
confidence: 92%
“…Two peaks at 1358 and 1361 cm −1 can be fitted, which should be respectively attributed to the D band from disordered carbons with the vibration of sp 3 defects and E 2g band vibration peak of BN. 34,35 The characteristic D and G bands strongly demonstrate the existence of carbon in all resultant BN@NC hybrids. The intensity ratio of the D to G band (I D /I G ) is calculated to evaluate the disorder and defects of carbon.…”
Section: Resultsmentioning
confidence: 92%
“…5 Many ultrawide bandgap semiconductors, including high-aluminum-content gallium nitride (AlGaN, 4.4-5.1 eV), [6][7][8] aluminum nitride (AlN, 6.2 eV), 1,9 gallium oxide (Ga 2 O 3 , 4.4-5.3 eV), [10][11][12][13][14] and boron nitride (BN, 4.5-5.5 eV), have been widely used in UV detection technology. 15,16 Owing to the characteristics of oxygen molecule adsorption and UV absorption, many wide-bandgap metal oxide materials, including zinc oxide (ZnO, 3.29 eV), 17,18 tungsten oxide (WO 3 , 2.6 eV), [19][20][21][22] stannic oxide (SnO 2 , 3.8 eV), 23,24 and titanium oxide (TiO 2 , 3.2 eV), 25,26 have also been extensively studied. Based on the different working principles, the UV semiconductor detector structures can be classified into the following types: Schottky barrier photodiodes, 27 photoconductors, 28 p-n or p-i-n junction types 29 and field-effect transistor-based structures.…”
Section: Introductionmentioning
confidence: 99%
“…[59] The rise time mainly results from the transit time required for the photogenerated charge carriers to drift to the electrodes, while the fall time correlates with the transit time of electrons through electrodes as well as the trap states from the surface and internal defects. [60,61] Therefore, the long fall time suggests a high defect density existing on these nanowires after electrode deposition. In this work, these horizontally oriented nanowires are formed directly on a flexible surface through a one-step vapor-phase deposition.…”
Section: Performance Of the In-situ Integrated Flexible Photodetectormentioning
confidence: 99%