Update Of Our 1982 Low Energy X-Ray Photoabsorption And Scattering Factor Tables

Henke, Burton L.; Gullikson, E. M.; Davis, Joel; Fryer, M; Oren, A. L.

doi:10.1117/12.945483

Cited by 8 publications

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“…For the convenience of the readers and also for comparison with other data, in Figure 1a we show the 1989 update, extension and revision of the widely-used semi-empirical tables [3,4]. This revision includes some of our preliminary broad range data for Ti, -5-Cr, Ni and Cu which we show here respectively in Figure 1b, 1c, 1e and 1f.…”

Section: Resultsmentioning

confidence: 99%

“…A perusal of current photoabsorption cross sections which bracket the 2p thresholds of 3d transition metals Ca-Cu requires more and better measurements to refine theoretical methodologies [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…Photoabsorption cross-section in cm 2 /g showing in (a) the 1989 LBL (Henke) revision of 1982 semi-empirical tables[3,4] where the solid line is a data fit and the dashed line is based on RTDLDA theory[13]. Measurement with 10% overall uncertainties are compared with the 1981 LLNL sub-keV theoretical data base[14] for Ti in (b), Cr in (c), Fe in (d), Ni in (e) and Cu in (f).…”

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confidence: 99%

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Lshell photoabsorption spectroscopy for solid metals: Ti, V, Cr, Fe, Ni, Cu

Grande

1990

Phys. Scr.

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This document was prepared as an accoaat of work sponsored by an agency of the United Suits Gorcmtaenl. Neither the Halted SUtes Government nor ike University of California aor uy of tkeir employees, nukes aay warranty, express or iaiptted, or anames any legal liability or responsibility for the accaracy, comple*«nesa, or •sefnlncss of any information, apamratas, predact, or process disclosed, or represents that its use woafd not infringe privately «w«cd rights. Reference herein fo amy specific commercial products, process, or serrice by Had* aajae, trademark, aunafactarer. or otherwise, does not necessarily coastiCatc of imply ila eadorsenwni, reriawwrndatten, or fatoriac by the United Suira Coterameat or Ibe University of California. The >itm IH opinions of natbors expressed herein do not necessarily Male or reflect those of the United SUtes Government or the University of California, and shall not be «*ed for advertising ar aradarl eadwaraarat aaraoacj.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Lshell photoabsorption spectroscopy for solid metals: Ti, V, Cr, Fe, Ni, Cu

Grande

1990

Phys. Scr.

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“…In this work, we could convert the incident angle to the detection depth based on the method reported in Refs. [23][24][25], by considering an X-ray wavelength of 1.54 Å and electron density of 0.963 Å −3 , calculated by assuming a 3.22 g cm −3 density of 4H-SiC. A more detailed explanation has been described in our previous paper (Ref .…”

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The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001)

Hatmanto

Kita

2019

Appl. Phys. Express

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The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001) were investigated. Our results suggested that lattice distortion introduction and lattice relaxation seem to follow zeroth and second order rate laws, respectively. The obtained activation energy of ∼3.9 eV for lattice distortion introduction and ∼1 eV for its relaxation indicate that the lattice distortion is determined by a bond rearrangement or movement process with a relatively low activation energy. Furthermore, the formation of byproducts which remain at the surface region of 4H-SiC was predicted to be a possible origin of the significant lattice distortion.

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“…The rcflectivity peaks measured at an angle a = 60 ° with respect to the surface normal lie in the "water window" (2.4-4.4 rim). The rcflectivity values in the peak are considerably lower than those expected for an ideal multilayer system of Mo and Si (tr = 0 nm), for which a calculation using the optical constants of Henke and coworkers [18] results in 4.3% for s-polarized light. The increase in roughness from 0.2 nm at the bottom to 0.4 nm at the top of the stack reduces this value by almost a factor of 2.…”

Section: Experiments and Resultsmentioning

confidence: 80%

Smoothing of interfaces in ultrathin Mo/Si multilayers by ion bombardment

et al. 1993

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Mo/Si multilayers with a bilayer thickness of 2.6 nm are produced by electron beam evaporation in ultrahigh vacuum for soft X-ray optical applications. High reflectivities resulting from constructive interference in the stack are limited by the optical constants of the materials and by the quality of the interfaces. Smoothing of the boundaries is obtained by bombardment of the deposited layers with Ar + ions. The smoothness of the interfaces is controlled during the deposition by in situ measurement of the reflectivity for the C K radiation of the stack and after completion of the stack by means of a grazing X-ray reflection set-up with Cu Ks radiation. The soft X-ray reflectivity is measured with a laser-induced plasma light source.

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Update Of Our 1982 Low Energy X-Ray Photoabsorption And Scattering Factor Tables

Cited by 8 publications

References 0 publications

Lshell photoabsorption spectroscopy for solid metals: Ti, V, Cr, Fe, Ni, Cu

Lshell photoabsorption spectroscopy for solid metals: Ti, V, Cr, Fe, Ni, Cu

The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001)

Smoothing of interfaces in ultrathin Mo/Si multilayers by ion bombardment

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