Use of 300 mm magnetic Czochralski wafers for the fabrication of IGBTs

From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

Section: Improving Fundamental Trade-offmentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

“…Our investigations of the influence of oxygen and carbon contents on hydrogen-related donor profiles are reported in detail in Ref. [1]. For these investigations, we used 300 mm MCZ wafers with different carbon and oxygen content and processed each wafer with the same combination of three proton implantations.…”

Section: Fig 3 Radial Resistivity Profile For 200 MM Cz Wafers (Cz-1mentioning

confidence: 99%

“…The manufacturing of IGBTs on MCZ substrates poses several challenges. The first topic is a significantly higher oxygen content of >1 × 10 17 cm −3 compared to values of <1 × 10 16 cm −3 for FZ which can lead to the formation of thermal donors (TDs) [1]. For the case that high energy particle irradiation is involved in the manufacturing process, like electron irradiation to control carrier lifetime or proton irradiation to form n-type regions [2] this may even increase the concentration of TDs by the formation of radiation-enhanced thermal donors [3].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of IGBTs using 300 mm magnetic Czochralski substrates

Schulze

Öfner

Niedernostheide

et al. 2019

Up to now the vast majority of insulated gate bipolar transistors (IGBTs) has been produced on silicon (Si) wafers out of the float-zone (FZ) process. FZ crystals can easily be used for this application, but are only available with a diameter of up to 200 mm. However, the use of wafer substrates with a diameter of 300 mm offers a significant increase in productivity and is therefore the diameter of choice for the high-volume production of CMOS devices. In order to benefit from this advantage also for the manufacturing of IGBTs, material out of the magnetic Czochralski process, which is available in 300 mm, had to be adapted. Key issues include crystal originated particles, dopant segregation along the crystal axis, and the higher concentration of oxygen. In particular, the implementation of the field-stop zone by the implantation of protons will lead to the additional formation of hydrogen-decorated C I O I complexes which can act electrically as donors. However, by an appropriate adjustment of the processing parameters the electrical characteristics of IGBTs on FZ substrates can be well reproduced.

“…Second, m:Cz substrates contain also a certain concentration of carbon impurities. Detailed investigations [5] have shown that an optimisation of the FS profile in IGBTs is possible if the influence of the carbon and oxygen concentration in m:Cz substrates are carefully taken into account.…”

Section: MM Silicon Wafersmentioning

confidence: 99%

Progress in IGBT development

Niedernostheide

Schulze

Laska

et al. 2018

Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin-wafer-processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness. Latest advancements regarding thermal management in both modules and discrete chips are also addressed. (a) Turn-off transients of a 15 A-1200 V-IGBT with an FS layer created by a threestage proton implantation (T = 125°C), (b) Maximum DC-link voltage V DC,max at which the IGBT can be turned off softly