Use of angle resolved x-ray photoelectron spectroscopy for determination of depth and thickness of compound layer structures

Spruytte, S.G.; Coldren, C.W.; Harris, J. J.; Pantelidis, Dimitrios; Lee, H.-J.; Bravman, J. C.; Kelly, Michael A.

doi:10.1116/1.1344906

Cited by 12 publications

(13 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Two main oxygen species can be identified: a peak at 531.0 eV due to ZnO lattice oxygen and a peak at 532.8 eV due to hydroxyl groups. The spectra remained unchanged after a further 24 h in vacuum conditions ͑ϳ5 ϫ 10 −8 m bar͒, indicating both faces contained a uniform layer of hydroxide ͑estimated thickness ϳ0.6 nm using the method of Spruytte et al 17 ͒ prior to Schottky contact deposition.…”

mentioning

confidence: 99%

Silver oxide Schottky contacts on n-type ZnO

Allen

Durbin

Metson

2007

Applied Physics Letters

149

View full text Add to dashboard Cite

Related Articles Evolution of polarization and space charges in semiconducting ferroelectrics J. Appl. Phys. 111, 034109 (2012) Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts J. Appl. Phys. 111, 07C503 (2012) Epitaxial Fe(1−x)Gax/GaAs structures via electrochemistry for spintronics applications J. Appl. Phys. 111, 07E502 (2012) Metal contact to graphene nanoribbon Appl. Phys. Lett. 100, 063108 (2012) Cross-linking of a poly(3,4-ethylene dioxythiophene):(polystyrene sulfonic acid) hole injection layer with a bisazide salt and the effect of atmospheric processing conditions on device properties APL: Org. Electron. Photonics 5, 34 (2012) Additional information on Appl. Phys. Lett.

show abstract

mentioning

confidence: 99%

Silver oxide Schottky contacts on n-type ZnO

Allen

Durbin

Metson

2007

Applied Physics Letters

149

View full text Add to dashboard Cite

show abstract

“…in the data analysis employed here, the depth profile data, i.e., the N 1s and O 1s intensities, since at each takeoff angle, the N 1s and O 1s intensities were normalized with the Al 2p intensity at that angle. 30,31 The Al 2p peak is commonly used as reference for other elemental peaks in previous nitridation studies. 4,[11][12][13][14][15][16][17][18][19] The Al 2p peak serves as a reference since the vapor pressure of aluminum containing species, e.g., AlO, Al 2 O, and Al, is negligible at 1100°C.…”

Section: B Angle-resolved Xpsmentioning

confidence: 99%

X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

Dwikusuma

Kuech

2003

Journal of Applied Physics

View full text Add to dashboard Cite

The nitridation of c-plane sapphire within the hydride vapor phase epitaxy system was systematically studied as a function of time and ammonia partial pressure using ex situ x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and atomic force microscopy. During the nitridation process, nitrogen was incorporated into the sapphire surface. There were two different nitrogen chemical bonding states, which can be attributed to N-Al bonds and nitrogen in oxygen-rich environment ͑'N-O'͒. As the nitridation continued, the N 1s intensity increased while the O 1s intensity decreased indicating the growth of a nitrogen-rich layer. The sapphire nitridation process can be modeled as a diffusion couple of AlN and Al 2 O 3 , where N 3Ϫ and O 2Ϫ interdiffuse in the rigid Al 3ϩ framework. Nitrogen diffuses into sapphire and substitutes for oxygen to bond with aluminum. The bond substitution is accompanied by structural changes where the AlN in-plane direction is rotated 30°with respect to the sapphire direction. The replaced oxygen diffuses out to the surface, combines with hydrogen and desorbs as H 2 O. The overall nitridation rate is determined by the slower of the two moving anions. From the x-ray photoelectron spectroscopy data, the chemical diffusion coefficient of nitrogen (D N ) and oxygen (D O ), were estimated. D N was found to be higher than D O , which suggested that the overall nitridation rate was controlled by the diffusion of oxygen to the surface. After nitridation, no protrusions were observed on the surface and no significant changes in the surface roughness were measured when compared to the as-received sapphire.

show abstract

“…However, because of certain assumptions, signal attenuation, and diffuse boundaries of layers, XPS layer models have only been able provide a rather qualitative representation of a real sample, and the depths of atomic species can only be relatively considered [13]. For the simple situation of a substrate with one buried layer, the X-ray photoelectron intensities of atoms in the buried layer, collected at different take-off angles, must obey the following relationship [11]:…”

Section: Resultsmentioning

confidence: 99%

Molecular structure of interfaces formed with plasma-polymerized silica-like primer films: Part II. Characterization of the primer/metal interface using x-ray photoelectron spectroscopy in SITU

Turner¹,

Boerio²

2002

The Journal of Adhesion

View full text Add to dashboard Cite

X-ray photoelectron spectroscopy (XPS) was performed in situ on plasmapolymerized silica-like films that were deposited onto metal substrates. Relatively thick films ($8.0 nm) had spectra that were typical of bulk amorphous silicon dioxide (a-SiO 2 ). When thinner films were analyzed ($2.4 nm), a Si(2p) peak emerged that was due to the formation of silicon suboxide at the interface. Changes in the metal and metal oxide peaks showed that oxidation of the substrates during plasma etching and deposition occurred. It was determined that during the initial stages of plasma deposition, metal atoms from the substrate migrated to the metaloxide surface. This resulted in preferential oxidation of metal atoms with the formation of silicon suboxide at the film=metal interface. In addition, interfacial suboxide formation was shown to have a dependence upon the diffusivity of the metal substrate atoms through the surface oxide of the metal. As a result, more interfacial suboxide was observed to form for depositions on titanium substrates in comparison with depositions on aluminum substrates. A detailed analysis of the atomic species detected with in situ XPS enabled us to develop a model of the molecular structure at the a-SiO 2 =metal interface for plasma depositions on aluminum and titanium substrates. When the possible chemical reaction routes for film deposition were considered, the formation of primary Al-O-Si and Ti-O-Si bonds at the interface was proposed.

show abstract

Use of angle resolved x-ray photoelectron spectroscopy for determination of depth and thickness of compound layer structures

Cited by 12 publications

References 16 publications

Silver oxide Schottky contacts on n-type ZnO

Silver oxide Schottky contacts on n-type ZnO

X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

Molecular structure of interfaces formed with plasma-polymerized silica-like primer films: Part II. Characterization of the primer/metal interface using x-ray photoelectron spectroscopy in SITU

Contact Info

Product

Resources

About