Use of channeling for the study of radiation effects in nuclear materials

Thomé, L.; Moll, S.; Debelle, A.; Garrido, F.; Sattonnay, G.; Jagielski, J.

doi:10.1016/j.nimb.2012.08.018

Cited by 11 publications

(7 citation statements)

References 42 publications

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“…The dpa were calculated with displacement threshold energies of 20 eV for Zr and 60 eV for O atoms . This plot allows following the phase transition build‐up and may be reproduced with the two‐step accumulation (MSDA) model . The first step could be associated to defect creation and the second one to the phase transition, in good agreement with the two‐step mechanism proposed by Simeone et al .…”

Section: Resultssupporting

confidence: 71%

“…Results are compared to the f d determined by the RBS‐C technique in ex situ conditions . Both damage build‐ups are in very good agreement and may be reproduced using the multi‐step damage accumulation (MSDA) model represented by the equation:

f_{D} = true {true\sum}_{i = 1}^{n - 1} ({}, f_{D, i}^{s a t} G ([], 1 - normalexp ((), - σ_{i} ((), Φ - Φ_{i}))) true {true\prod}_{k = 1}^{n} ([], normalexp ((), - σ_{k + 1} ((), Φ - Φ_{k + 1})))) + f_{D, n}^{s a t} G ([], 1 - normalexp ((), - σ_{n} ((), Φ - Φ_{n})))

where f D,i sat is the level of damage at saturation, n is the number of steps required for the achievement of the total disordering process, Φ i is the threshold ion fluence of the i th step and σ i the disordering cross section at the i th step. G corresponds to the Heaviside function H multiplied by its argument.…”

Section: Resultsmentioning

confidence: 96%

“…Total disorder deduced from in situ Raman (filled squares) and RBS/C (filled circles) for irradiated 6H‐SiC samples as a function of ion fluence. The curves are least‐squares fits of Raman and RBS/C data with the MSDA ( n = 2).…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Monitoring of the microstructure of ion‐irradiated nuclear ceramics by in situ Raman spectroscopy

Miro

Bordas

Thomé

et al. 2015

J Raman Spectroscopy

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Raman spectroscopy is an efficient technique for studying the evolution of microstructure of materials under irradiation. For that purpose, a Raman spectrometer has been recently installed at the JANNUS‐Saclay platform. In this paper, we describe the new setup for in situ experiments. These in situ experiments allowed following the microstructural evolution of different materials (SiC, ZrO2 and B4C) as a function of ion fluence on a single sample (either single crystal or polycrystalline ceramics) under the same irradiation conditions. Our results show that Raman spectroscopy is a versatile non‐contact technique for studying on‐line crystalline phase changes or amorphization of irradiated iono‐covalent solids. A detailed analysis of Raman spectra is provided for the three materials (SiC, ZrO2 and B4C) investigated in this study, revealing quite different behaviors upon irradiation. Basically, Raman spectroscopy gives insight on these evolutions at the level of bonds given by specific phonon modes, in good agreement with Rutherford backscattering channeling (RBS/C), X‐ray diffraction (XRD) or transmission electron microscopy (TEM) data, which provide information at a long‐range scale. Copyright © 2015 John Wiley & Sons, Ltd.

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Section: Resultssupporting

confidence: 71%

f_{D} = true {true\sum}_{i = 1}^{n - 1} ({}, f_{D, i}^{s a t} G ([], 1 - normalexp ((), - σ_{i} ((), Φ - Φ_{i}))) true {true\prod}_{k = 1}^{n} ([], normalexp ((), - σ_{k + 1} ((), Φ - Φ_{k + 1})))) + f_{D, n}^{s a t} G ([], 1 - normalexp ((), - σ_{n} ((), Φ - Φ_{n})))

Section: Resultsmentioning

confidence: 96%

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Monitoring of the microstructure of ion‐irradiated nuclear ceramics by in situ Raman spectroscopy

Miro

Bordas

Thomé

et al. 2015

J Raman Spectroscopy

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“…On the other hand, no tracks but only scarce point defects are created in the S e regime. 12,26 Thus, the value f D ¼ 1 obtained upon I ion irradiation was expected, and the value f D $ 0.2 obtained upon W ion irradiation is very likely due to the (weak) fraction of nuclear collisions created by swift W ions in the near-surface region of SiC crystals. Surprisingly, Figures 3 and 4 show that in this material S n and S e irradiation leads to much lower f D (0.67 at maximum) than that obtained for S n þ S e (f D ¼ 1) or even for the S n irradiation alone (f D ¼ 1).…”

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confidence: 78%

Combined effects of nuclear and electronic energy losses in solids irradiated with a dual-ion beam

Thomé¹,

Debelle²,

Garrido³

et al. 2013

Applied Physics Letters

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Single and dual-beam irradiations of oxide (c-ZrO2, MgO, Gd2Ti2O7) and carbide (SiC) single crystals were performed to study combined effects of nuclear (S-n) and electronic (S-e) energy losses. Rutherford backscattering experiments in channeling conditions show that the S-n/S-e cooperation induces a strong decrease of the irradiation-induced damage in SiC and MgO and almost no effects in c-ZrO2 and Gd2Ti2O7. The healing process is ascribed to electronic excitations arising from the electronic energy loss of swift ions. These results present a strong interest for both fundamental understanding of the ion-solid interactions and technological applications in the nuclear industry where expected cooperative S-n/S-e effects may lead to the preservation of the integrity of nuclear devices. (C) 2013 AIP Publishing LLC

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“…From previous studies, one of the key questions relies on the possibility to determine the amount of damage created in a crystalline material all along the trajectories of incident ions. The channeling technique, generally associated with Rutherford backscattering spectrometry (RBS), is certainly, up to now, the most frequently used methodology to achieve this task . Very recently, high‐resolution transmission electron microscopy (HRTEM) was also implemented to determine the structure of ion tracks from the surface of samples up to several micrometers .…”

Section: Introductionmentioning

confidence: 99%

Monitoring by Raman spectroscopy of the damage induced in the wake of energetic ions

Miro

Velişa

Thomé

et al. 2014

J Raman Spectroscopy

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This article reports micro-Raman experiments performed on cross sections of 6H-SiC crystals irradiated with heavy ions of different energies. The results demonstrate that this technique is very powerful to quantify the damage created in the wake of energetic ions from the surface of samples down to the ion resting position. For slow ions (900-keV I), ballistic collisions lead to the amorphization of the surface region of samples. For swift ions (36-MeV W), the surface region remains crystalline and amorphization occurs around the end of the ion path. Moreover, synergistic effects between electronic and nuclear slowing down processes are put forward. The methodology used in this work may be adapted to other materials where radiation effects need to be investigated, provided that the damage created by irradiation is detectable by Raman spectroscopy.

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Use of channeling for the study of radiation effects in nuclear materials

Cited by 11 publications

References 42 publications

Monitoring of the microstructure of ion‐irradiated nuclear ceramics by in situ Raman spectroscopy

Monitoring of the microstructure of ion‐irradiated nuclear ceramics by in situ Raman spectroscopy

Combined effects of nuclear and electronic energy losses in solids irradiated with a dual-ion beam

Monitoring by Raman spectroscopy of the damage induced in the wake of energetic ions

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