Use of commercial VDMOSFETs in electronic systems subjected to radiation

Picard, C.; Brisset, C.; Quittard, O.; Marceau, M.; Hoffmann, A.; Joffre, F.; Charles, J.‐P.

doi:10.1109/23.856490

Cited by 7 publications

(10 citation statements)

References 8 publications

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“…In many of these applications devices may be subjected to stress or harsh environment conditions. Accordingly, investigation of their reliability and related effects is of high importance [1][2][3][4][5][6][7][8][9][10][11].…”

Section: Development Of Advanced Electronic Industry Is Based On Combmentioning

confidence: 99%

“…Important details of used equipment for stress, annealing and measurement will be described in Sect. 4.…”

Section: Nbt Stress Effectsmentioning

confidence: 99%

“…Although some of these pairs recombine, most of the generated electrons, however, quickly escape from the oxide, while most of the holes (which are weakly mobile) get captured in the oxide volume on oxygen vacancy defects O 3 ≡Si • • Si≡O 3 , contributing to creation of positive oxide trapped charge over a reaction identical to (4).…”

Section: Underlying Mechanismsmentioning

confidence: 99%

“…Also, a fraction of the holes could be trapped at oxide defects, such as oxygen vacancies, also contributing to oxide trapped charge increase over a reaction identical to (4).…”

Section: Underlying Mechanismsmentioning

confidence: 99%

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NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs

et al. 2018

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In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.

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Section: Development Of Advanced Electronic Industry Is Based On Combmentioning

confidence: 99%

“…Important details of used equipment for stress, annealing and measurement will be described in Sect. 4.…”

Section: Nbt Stress Effectsmentioning

confidence: 99%

Section: Underlying Mechanismsmentioning

confidence: 99%

“…Also, a fraction of the holes could be trapped at oxide defects, such as oxygen vacancies, also contributing to oxide trapped charge increase over a reaction identical to (4).…”

Section: Underlying Mechanismsmentioning

confidence: 99%

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NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs

et al. 2018

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“…A complex series of total dose measurements for n-channel MOSFETs IRF620 and IRF130 are available in the literature [26]. This reference describes a method of hardening whereby a MOSFET is pre-exposed to radiation and then annealed at 100 C  .…”

Section: Measurement Of Total Dose Effects In Commercial Mos Devicesmentioning

confidence: 99%

Analytical models for total dose ionization effects in MOS devices.

Campbell¹,

Bogdan²

2008

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MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the 2 / SiO Si interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.

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