Use of genetic algorithms for the simultaneous estimation of thin films thermal conductivity and contact resistances

Estimation of emissivities in a two-dimensional irregular geometry by inverse radiation analysis using hybrid genetic algorithm

“…On the other hand, the genetic algorithm (GA), which is based on natural selection concept [14], is also one of the optimization methods. It has been used for parameter estimation in such applications as chemical laser modeling [15], kinetic model [16], groundwater contaminant transport model [17] and thin ÿlms [18]. Park and Froment [16] used hybrid genetic algorithm (HGA) to diminish the e ects of genetic parameters such as the population size, the probability of crossover and the probability of mutation on the performance of GA. GA is di erent from aforementioned methods in that gradient information of objective function is not required.…”

Micro-thermoelectric cooler: interfacial effects on thermal and electrical transport

“…The difference between T e and T p increases as j e increases, as expected by inspection of Eqs. (19) and (20). The distance from the junctions (hot or cold) required for electrons and phonons to reach equilibrium, i.e, where T e ¼ T p , is larger (for j e not equal to zero) than the cooling length of 156 nm estimated for Sb 2 Te 3 .…”

“…1. The Seebeck (19) and (20)]. coefficient a S is an indicator of the device thermopower, i.e., the Peltier heating/cooling at the junctions, _ S e;P , and should be maximized.…”

“…Nomenclature a unit cell dimension (m), side length (m) A k cross-sectional area of the thermoelectric element (m 2 ) A j¼1; 4 constants in the electron and phonon temperature equations [Eqs. (19) and (20) The electron boundary resistance is estimated assuming electron tunneling and using the Wiedemann-Franz law at the boundaries [7]. The electron and phonon temperature distributions in the thermoelectric elements are obtained from a simplified form of the coupled Boltzmann transport equations for the electron and phonon subsystems [7,10,13].…”

“…The electron and phonon temperature distributions in the thermoelectric elements are obtained from a simplified form of the coupled Boltzmann transport equations for the electron and phonon subsystems [7,10,13]. In addition, the thermal and electrical contact resistances (due to defects in the crystal structure, variation of surface roughness, etc, originated in the fabrication process) are estimated from the experimental results reported in the literature [16][17][18][19][20][21][22]. Based on these interfacial effects, the flows of heat and electricity in the micro-cooler are modeled.…”