Use of Phosphine as an n-Type Dopant Source for Vapor−Liquid−Solid Growth of Silicon Nanowires

Wang, Yanfeng; Lew, Kok Keong; Ho, Tsung Ta; Pan, Ling; Novak, Steven W.; Dickey, Elizabeth C.; Redwing, Joan M.; Mayer, Theresa S.

doi:10.1021/nl051442h

Cited by 143 publications

(143 citation statements)

References 20 publications

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“…Dopant incorporation is reported for diborane, 4 trimethylboron, 5 phosphine, 3 and arsenic. 6 By changing the dopant source during growth, p-n junctions can be realized along the axis of the nanowire.…”

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Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation

et al. 2009

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The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current-voltage measurements. By varying the implantation parameters in several process steps, uniform p-and n-doping profiles as well as p-n junctions along the nanowire axis are realized. The effective doping is demonstrated by electron beam-induced current imaging on single nanowires, and current-voltage measurements show their well-defined rectifying behavior.Semiconductor nanowires are expected to play a critical role in future electronic devices and sensors. 1 To make use of their semiconducting properties, doping is an important issue. Nanowires that form an epitaxial interface and thus are vertically aligned to the substrate are commonly grown by the vapor-liquid-solid (VLS) mechanism in which a metal catalyst forms eutectic droplets at the growing tips of the nanowires. 2 For silicon nanowires, a supply of Si vapor supersaturates these droplets with Si and leads to its precipitation at the liquid-solid (droplet-silicon) interface. Under the gold droplet, the nanowire grows as long as the Si vapor is present. Silicon nanowires reveal p-type conductance when they are grown using the VLS process without adding any dopant on purpose, but the resistivity is rather high (2 Ω cm 3 -400 Ω cm 4 ).Doping can be realized during the gas phase deposition process by adding dopants to the gas mixture in use for the nanowire growth. Dopant incorporation is reported for diborane, 4 trimethylboron, 5 phosphine, 3 and arsenic. 6 By changing the dopant source during growth, p-n junctions can be realized along the axis of the nanowire. 6,7 Little is known on the dopant incorporation mechanism, however. Therefore, it is not obvious to predict the doping concentration for a given process. Also, recent experimental results reveal the growth of a highly doped shell around the nanowire while doping during VLS growth. 8 As an alternative, reproducible and successful doping of nanowires can be achieved via ion implantation. This technique is a standard doping technique in top-down semiconductor manufacturing and offers the advantage to provide for precise control over the total dose of dopants, depth profile, and most importantly works well also for high doping levels of the order of 10 20 -10 21 cm -3 . It has been demonstrated that GaAs can be p-type doped using Zn ions, and Si by the respective use of B and P ions. 10 The latter work presents field effect transistors based on ion-implanted nanowires. However, the demonstration of ion-implanted nanowires acting as devices by themselves is still lacking. Masking selected parts of the sample at different implantation steps, the doping profile can be chosen to be different from nanowire to nanowire. This is an additional advantage over doping during growth, or etching nanowires out of a doped wafer, as for both these methods all nanowires reveal the same doping concentration. This pap...

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Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation

et al. 2009

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“…[1][2][3][4][5][6][7][8] In these studies, the effects of impurity doping were investigated mainly by electrical transport measurements. [1][2][3][4][5][6][7][8] The results showed a reduction in resistivity in doped SiNWs, suggesting that SiNWs are amenable to doping with impurity atoms. We recently investigated and characterized impurity doping in SiNWs synthesized by laser ablation.…”

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Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

Fukata

Mitome

Bando

et al. 2008

Applied Physics Letters

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Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation.

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“…The choice of the contact metals is dictated by p-type conductivity that is usually observed in undoped SiNWs. 33 Both Au and Pd metals workfunctions are closely matched to the valence band edge of Si to enable near-Ohmic contact for ptype transport. 34 The alignment of the SiNWs was performed using DEP by applying an AC field across two electrodes (at V pk-pk =12V) forming the source-drain contacts of the FET device.…”

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Rapid determination of nanowires electrical properties using a dielectrophoresis-well based system

Constantinou

Hoettges

Krylyuk

et al. 2017

Applied Physics Letters

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The use of high quality semiconducting nanomaterials for advanced device applications has been hampered by the unavoidable growth variability of electrical properties of one-dimensional nanomaterials such as nanowires and nanotubes, thus highlighting the need for the efficient semiconducting nanomaterials characterization. In this study, we demonstrate a low-cost, industrially-scalable dielectrophoretic (DEP) nanowire assembly method for the rapid analysis of the electrical properties of inorganic single crystalline nanowires, by identifying key features in the DEP frequency response spectrum from 1kHz to 20MHz in just 60 seconds. Nanowires dispersed in anisole were characterized using a three-dimensional DEP chip (3DEP), and the resultant spectrum demonstrated a sharp change in nanowire response to DEP signal in 1-20MHz frequency range. The 3DEP analysis, directly confirmed by field-effect transistor data, indicates that nanowires with higher quality are collected at high DEP signal frequency range above 10MHz, whereas lower quality nanowires, with two orders of magnitude lower current per nanowire, are collected at lower DEP signal frequencies. These results show that 3DEP platform can be used as a very efficient characterization tool of the electrical properties of rod-shaped nanoparticles to enable dielectrophoretic selective deposition of nanomaterials with superior conductivity properties.a Authors to whom correspondence should be addressed. Electronic

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Use of Phosphine as an n-Type Dopant Source for Vapor−Liquid−Solid Growth of Silicon Nanowires

Cited by 143 publications

References 20 publications

Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation

Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation

Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

Rapid determination of nanowires electrical properties using a dielectrophoresis-well based system

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