Use of the Peak-to-background Ratio for Quantitative Auger Analysis of Semi-insulating Polycrystalline Silicon Layers

Abstract

The work presents the results of quantitative evaluation of Auger electron spectra utilizing the heights of Auger peaks normalized with respect to the background inN(E)vs.E distribution curves. The quantification method used was verified on a series of semi‐insulating polycrystalline silicon samples with a variable content of oxygen. The results obtained were compared with those yielded by other procedures of quantitative AES, and by secondary neutral mass spectrometry.