Using anodic aluminum oxide templates and electrochemical method to deposit BiSbTe-based thermoelectric nanowires

Abstract

In this study, the cyclic voltammetry method was first used to find the reduced voltages and anodic peaks of Bi3+, Sb3+, and Te4+ ions as the judgments for the growth of the (Bi,Sb)2 - x Te3 + x-based materials. Ethylene glycol (C2H6O2) was used as a solvent, and 0.3 M potassium iodide (KI) was used to improve the conductivity of the solution. Two different electrolyte formulas were first used: (a) 0.01 M Bi(NO3)3-5H2O, 0.01 M SbCl3, and 0.01 M TeCl4 and (b) 0.015 M Bi(NO3)3-5H2O, 0.005 M SbCl3, and 0.0075 M TeCl4. The potentiostatic deposition process was first used to find the effect of reduced voltage on the variation of compositions of the (Bi,Sb)2 - xTe3 + x-based materials. After finding the better reduced voltage, 0.01 M Bi(NO3)3-5H2O, 0.01 M SbCl3, and 0.01 M TeCl4 were used as the electrolyte formula. The pulse deposition process was successfully used to control the composition of the (Bi,Sb)2 - xTe3 + x-based materials and grow the nanowires in anodic aluminum oxide (AAO) templates.

Fabrications of Hetero-Junction Schottky Diodes by Electrodeposition of Nano-Structured CuInSe2 Materials Using Different Upper Electrodes

“…Thus, we used cyclic voltammetry as the method, anodic aluminum oxide (AAO) as a template, and Bi(NO 3 ) 3 -5H 2 O, SbCl 3 , and TeCl 4 as the ions' sources to grow (Bi,Sb) 2−x Te 3+x -based nanowires. [15]. For this, the first subject of our research was to grow CIS films (CIS-TFs) and nanorods (CIS-NRs) using an electrodeposition method, and AAO was used as a template for growing the CIS-NRs.…”

Effect of deposition potential and concentration of electroactive substances on Bi2Te3 nanowires fabricated by electrochemical method

“…Thermoelectric (TE) materials have the ability of directly converting thermal energy into electrical energy, and thus play an important role in a global sustainable energy solution [1]. For practical applications, the essential concern lies in the improvement of TE conversion efficiency, which is represented by the dimensionless value of merit zT [2].…”