“…Especially, the unique advantages of iCVD process enabled successful fabrication of TFE, even when coupled with other inorganic layer deposition process, such as plasmaenhanced chemical vapor deposition (PECVD), [9,10] and hotwire chemical vapor deposition (HWCVD) systems. [11][12][13] The barrier properties of TFE fabricated via the iCVD/ALD, iCVD/PECVD, and iCVD/HWCVD pairs were similar to each other. However, the thickness of inorganic layer was around 100 nm for PECVD and HWCVD-deposited films, while it was 25 nm for ALD-deposited films.…”