2015
DOI: 10.1016/j.tsf.2014.10.029
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Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

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Cited by 33 publications
(15 citation statements)
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“…[6][7][8] These advantages of the deposition methods contributed to the fabrication of TFEs with outstanding barrier property for the encapsulation of organic electronics. [11][12][13] The barrier properties of TFE fabricated via the iCVD/ALD, iCVD/PECVD, and iCVD/HWCVD pairs were similar to each other. [11][12][13] The barrier properties of TFE fabricated via the iCVD/ALD, iCVD/PECVD, and iCVD/HWCVD pairs were similar to each other.…”
Section: Introductionmentioning
confidence: 70%
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“…[6][7][8] These advantages of the deposition methods contributed to the fabrication of TFEs with outstanding barrier property for the encapsulation of organic electronics. [11][12][13] The barrier properties of TFE fabricated via the iCVD/ALD, iCVD/PECVD, and iCVD/HWCVD pairs were similar to each other. [11][12][13] The barrier properties of TFE fabricated via the iCVD/ALD, iCVD/PECVD, and iCVD/HWCVD pairs were similar to each other.…”
Section: Introductionmentioning
confidence: 70%
“…Especially, the unique advantages of iCVD process enabled successful fabrication of TFE, even when coupled with other inorganic layer deposition process, such as plasmaenhanced chemical vapor deposition (PECVD), [9,10] and hotwire chemical vapor deposition (HWCVD) systems. [11][12][13] The barrier properties of TFE fabricated via the iCVD/ALD, iCVD/PECVD, and iCVD/HWCVD pairs were similar to each other. However, the thickness of inorganic layer was around 100 nm for PECVD and HWCVD-deposited films, while it was 25 nm for ALD-deposited films.…”
Section: Introductionmentioning
confidence: 99%
“…As a matter of fact, in our measurement configuration, a water molecule diffusing laterally through the barrier to the Ca samples should go through a path in the range of several centimeters, orders of magnitude higher than for a molecule permeating through the barrier system. 4 The defects present on the surface of the PEN substrate find their origin either in the dust contamination due to lab environment and/or antistatic particles, prior to the deposition process. The defect density can be rather scattered, as shown in Fig.…”
Section: Infiltration Of the Organic Interlayer In The Sio 2 Layermentioning
confidence: 99%
“…[1]. This approach has led to water vapor transmission rate (WVTR) values in the 10 −6 g m −2 day −1 regime [2][3][4], therefore suitable for the encapsulation of high-end devices, such as thin film solar cells and flexible organic light emitting diodes [5].…”
Section: Introductionmentioning
confidence: 99%
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