Using nanoindentation and cathodoluminescence to identify the bundled effect of gallium nitride grown by PA-MBE

Wen, Hua-Chiang; Chou, Wu–Ching; Chiang, Tun Yuan; Jeng, Yeau-Ren; Fan, W. C.

doi:10.1016/j.jallcom.2016.09.237

Cited by 3 publications

(5 citation statements)

References 27 publications

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“…As shown in Figure 1, however, the micro-to nano-scale sizes of the grain boundaries were observed when the values of x were 0.085 and 0.137. It was agreed that the combinations of surface energies were driven by the MBE growth, and therefore, the migration of the grain boundaries tended to form island-like particles as the Al mole fractions were increased [8,13]. The effects of the Al mole fractions on the adhesive failures of the Al x Ga 1−x N films were analyzed in real-time by using nanoscratch measurements.…”

Section: Resultsmentioning

confidence: 99%

“…For step (II), the Al x Ga 1−x N epi layers were grown on LT-GaN/AlN/Si (111) substrates in a high vacuum PA-MBE system [13]. To fabricate the Al x Ga 1−x N films on the LT-GaN/AlN/Si (111) substrates, an AlN buffer layer (5 nm) was deposited as a catalyst.…”

Section: Methodsmentioning

confidence: 99%

“…Zeng et al reported on the wear and tribochemical performances of GaN specimens, which exhibited extremely low wear rates [9], and in related studies, the behavior of the GaN was highly dependent on the crystal orientation [10] and moisture level [11]. In a recent study, issues related to the nanoindentation characterization of GaN epilayers on A-axis sapphire substrates [12] and the bundled effect of crystalline GaN nanocolumns were discussed [13]. Nanoscratch equipment can be applied as a tool to assess the adhesion of films at relatively large contact pressures.…”

Section: Introductionmentioning

confidence: 99%

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Nanotribological Characteristics of the Al Content of AlxGa1−xN Epitaxial Films

Wen,

Wu,

Liu

et al. 2023

Nanomaterials

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The nanotribological properties of aluminum gallium nitride (AlxGa1−xN) epitaxial films grown on low-temperature-grown GaN/AlN/Si substrates were investigated using a nanoscratch system. It was confirmed that the Al compositions played an important role, which was directly influencing the strength of the bonding forces and the shear resistance. It was verified that the measured friction coefficient (μ) values of the AlxGa1−xN films from the Al compositions (where x = 0.065, 0.085, and 0.137) were in the range of 0.8, 0.5, and 0.3, respectively, for Fn = 2000 μN and 0.12, 0.9, and 0.7, respectively, for Fn = 4000 μN. The values of μ were found to decrease with the increases in the Al compositions. We concluded that the Al composition played an important role in the reconstruction of the crystallites, which induced the transition phenomenon of brittleness to ductility in the AlxGa1−xN system.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nanotribological Characteristics of the Al Content of AlxGa1−xN Epitaxial Films

Wen,

Wu,

Liu

et al. 2023

Nanomaterials

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“…Contrary to our case, Wang et al [14] reported that the tails at the lower energy side are related to band filling effect. Wen et al [56] studied the growth temperature effect on optical response of GaN thin films grown by MBE and they obtained a blue shift at the beginning, then the PL peak of band edge regresses along with the increase of the growth temperature. Moreover, the growth temperature affects the FWHM of PL band gap peak at 10 K. This FWHM evolution is related to the threading dislocation density.…”

Section: Resultsmentioning

confidence: 99%

Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

Benzarti

Sekrafi

Khalfallah

et al. 2021

Journal of Alloys and Compounds

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“…In closing, we have analyzed the ZnTiO 3 films, where TiO 2 was using CL technique to improve the understanding of thermal treatment on the emission . Noted that, the ZnTiO 3 films have been compared to correlate the localization of the excitonic luminescence and the phase between of the ZnO and TiO 2 .…”

Section: Resultsmentioning

confidence: 99%

Cathodoluminescence study of defects in thermal treatment of zinc titanate thin films deposited by a cosputtering process

Chiang

Tsai

Huang

et al. 2018

Surface & Interface Analysis

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The effects of thermal treatment of polycrystalline ZnO-TiO 2 systems on their luminescence emission and phase properties were investigated using ex situ cathodoluminescence and backscattering electron microscopy. The main features of the spectrum are a blue band at 2.75 eV for the phase of TiO and a complex visible band at 2.18 eV for the phase of ZnO, whose peak intensity depends on the annealing temperature. The spectrum intensity is dominated by the ZnO phase when annealing temperature was 720°C, which is attributed to abnormal grain growth. Competition is observed between the broad band peaked at 2.18 eV and visible band peaked at 2.75 eV as the annealing temperature changed (820°C-920°C). The cathodoluminescence density is gradually governed by the TiO 2 phase, and the emission in polychromatic and monochromatic imaging is stronger equally at 920°C. The nucleation of the TiO 2 and ZnO grains is present in the backscattering electron images as well. KEYWORDSbackscattering electron microscopy, cathodoluminescence, radio frequency magnetron cosputtering

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Using nanoindentation and cathodoluminescence to identify the bundled effect of gallium nitride grown by PA-MBE

Cited by 3 publications

References 27 publications

Nanotribological Characteristics of the Al Content of AlxGa1−xN Epitaxial Films

Nanotribological Characteristics of the Al Content of AlxGa1−xN Epitaxial Films

Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

Cathodoluminescence study of defects in thermal treatment of zinc titanate thin films deposited by a cosputtering process

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