Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

Benzarti, Z.; Sekrafi, Tarek; Khalfallah, Ali; Bougrioua, Z.; Vignaud, D.; Evaristo, Manuel; Cavaleiro, A.

doi:10.1016/j.jallcom.2021.160951

Cited by 13 publications

(4 citation statements)

References 57 publications

(76 reference statements)

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“…Pop-in events are sudden and large plastic deformations can occur during nanoindentation, usually for materials featured by low dislocation density. These events are often associated with the homogeneous nucleation and emission of dislocations is activated [30]. In the case of undoped GaN layers, the presence of low dislocation density as low as 2 × 10 8 cm −2 can lead to the formation of pop-in events during nanoindentation and can lead to a higher degree of plastic deformation.…”

Section: Nanoindentation Tests Analysismentioning

confidence: 99%

Mechanical Properties and Creep Behavior of Undoped and Mg-Doped GaN Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Khalfallah

Benzarti

2023

Coatings

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This paper investigates the mechanical properties and creep behavior of undoped and Mg-doped GaN thin films grown on sapphire substrates using metal–organic chemical vapor deposition (MOCVD) with trimethylgallium (TMG) and bis(cyclopentadienyl)magnesium (Cp2Mg) as the precursors for Ga and Mg, respectively. The Mg-doped GaN layer, with a [Mg]/[TMG] ratio of 0.33, was systematically analyzed to compare its mechanical properties and creep behavior to those of the undoped GaN thin film, marking the first investigation into the creep behavior of both GaN and Mg-doped GaN thin films. The results show that the incorporated [Mg]/[TMG] ratio was sufficient for the transition from n-type to p-type conductivity with higher hole concentration around 4.6×1017 cm−3. Additionally, it was observed that Mg doping impacted the hardness and Young’s modulus, leading to an approximately 20% increase in these mechanical properties. The creep exponent is also affected due to the introduction of Mg atoms. This, in turn, contributes to an increase in pre-existing dislocation density from 2 × 108 cm−2 for undoped GaN to 5 × 109 cm−2 for the Mg-doped GaN layer. The assessment of the creep behavior of GaN and Mg-doped GaN thin films reveals an inherent creep mechanism governed by dislocation glides and climbs, highlighting the significance of Mg doping concentration in GaN thin films and its potential impact on various technological applications.

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Section: Nanoindentation Tests Analysismentioning

confidence: 99%

Mechanical Properties and Creep Behavior of Undoped and Mg-Doped GaN Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Khalfallah

Benzarti

2023

Coatings

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“…InN grown on GaN is fully relaxed, even for thicknesses as low as 1 nm, and forms misfit dislocations at the InN/GaN interface that have been observed and studied in the literature [10][11][12]. In addition to the high lattice mismatch challenges, due to its high equilibrium N 2 vapor pressure, InN must be grown at very low temperatures compared to GaN in common epitaxial techniques such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) [13,14]. The ideal MOCVD growth temperatures for GaN are above 1000 • C, while InN is grown at temperatures between 450 • C and 650 • C, above which temperature InN will decompose [5].…”

Section: Introductionmentioning

confidence: 99%

N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization

et al. 2023

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The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growth of InN was performed to explore the growth parameter space of the horizontal one-dimensional InN quantum wire-like structures on miscut substrates. The InN growth temperature, InN thickness, and NH3 flow during growth were varied to determine optimal quantum wire segment growth conditions. Quantum wire segment formation was observed through AFM images for N-polar InN samples with a low growth temperature of 540 °C and 1–2 nm of InN. Below 1 nm of InN, quantum dashes formed, and 2-D layers were formed above 2 nm of InN. One-dimensional anisotropy of the electrical conduction of N-polar InN wire-like samples was observed through TLM measurements. The sheet resistances of wire-like samples varied from 10–26 kΩ/□ in the longitudinal direction of the wire segments. The high sheet resistances were attributed to the close proximity of the treading dislocations at the InN/GaN interface and might be lowered by reducing the lattice mismatch of InN wire-like structures with the substrate using high lattice constant base layers such as relaxed InGaN.

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“…The growth of InN can also be improved by raising the substrate temperature, which enhances diffusion lengths and the two dimensional growth. [46,47] However, it is difficult to achieve thick InN epilayer using this method as growth cannot proceed for a long time. The reason is that the In-atom accumulate and form droplets on the surface shortly after growth process starts, which cannot be evaporated under growth temperature limits.…”

Section: Introductionmentioning

confidence: 99%

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Imran

Sulaman

Yousaf

et al. 2022

Adv Materials Inter

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The fabrication of high‐speed electronic and communication devices has rapidly grown the demand for high mobility semiconductors. However, their high cost and complex fabrication process make them less attractive for the consumer market and industrial applications. Indium nitride (InN) can be a potential candidate to fulfill industrial requirements due to simple and low‐cost fabrication process as well as unique electronic properties such as narrow direct bandgap and high electron mobility. In this work, 3 µm thick InN epilayer is grown on (0001) gallium nitride (GaN)/Sapphire template under In‐rich conditions with different In/N flux ratios by molecular beam epitaxy. The sharp InN/GaN interface monolayers with the In‐polar growth are observed, which assure the precise control of the growth parameters. The directly probed electron mobility of 3610 cm2 V‐1 s‐1 is measured with an unintentionally doped electron density of 2.24 × 1017 cm‐3. The screw dislocation and edge dislocation densities are calculated to be 2.56 × 108 and 0.92 × 1010 cm‐2, respectively. The step‐flow growth with the average surface roughness of 0.23 nm for 1 × 1 µm2 is confirmed. The high quality and high mobility InN film make it a potential candidate for high‐speed electronic/optoelectronic devices.

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Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

Cited by 13 publications

References 57 publications

Mechanical Properties and Creep Behavior of Undoped and Mg-Doped GaN Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Mechanical Properties and Creep Behavior of Undoped and Mg-Doped GaN Thin Films Grown by Metal–Organic Chemical Vapor Deposition

N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

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