Utilization of Trapped Optical Modes for White Perovskite Light-Emitting Diodes with Efficiency over 12%

Chen, Ziming; Li, Zhenchao; Chen, Zhe; Xia, Ruoxi; Zou, Guangruixing; Chu, Linghao; Su, Shi‐Jian; Peng, Junbiao; Yip, Hin‐Lap; Cao, Yong

doi:10.1016/j.joule.2020.12.008

Cited by 103 publications

(88 citation statements)

References 28 publications

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“…[1][2][3][4][5][6] The record EQE of PeLEDs has reached to more than 23% over the past several years, showing potential for next-generation solidstate lightings and displays. [7][8][9][10][11][12][13][14][15] Despite unprecedented efficiency progress, the stability and brightness of PeLEDs are still limited, especially for PeLEDs with visible-light emission. [16][17][18][19][20] Compared to organic-inorganic perovskites based on volatile organic cations, inorganic CsPbI 3 perovskite emitting red light is more attractive for chemically stable PeLEDs.…”

Section: Introductionmentioning

confidence: 99%

Deep‐Red Perovskite Light‐Emitting Diodes Based on One‐Step‐Formed γ‐CsPbI₃ Cuboid Crystallites

et al. 2021

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PeLEDs are based on CsPbI 3 nanocrystals/ quantum dots because the ligand-covered nanocrystal surface can passivate surface defects and stabilize black phase CsPbI 3 . Some spacer cations such as 1-naphthylmethylammonium and phenylbutylammonium can facilitate the formation of quasi-2D perovskite with smooth surface and improved PLQY. [21,25] However, The long-chained ligands of QDs and organic spacer layers of quasi-2D perovskites will resist the charge injection to PeLEDs and cause EQE roll-off under high current density and high brightness. [26][27][28][29] Alternatively, bulk 3D CsPbI 3 films without long chain ligands, which often obtained from spin-coating the precursor solutions directly, can maintain the high conductivity of CsPbI 3 perovskite. [19,21,25,30,31] Organic cations such as dimethylammonium (DMA + ), methylammonium (MA + ), and imidazolium (IZ + ) have been found to form an intermediate phase which will reduce the activation energy for phase transition to black phase 3D CsPbI 3 . [19,32,33] However, 3D CsPbI 3 films still suffer from high trap densities that will cause serious nonradiative recombination and reduce the efficiency and operation stability of PeLEDs. [31,34] In this work, we report a one-step method to in situ deposit γ-phase 3D CsPbI 3 perovskite films consisting of CsPbI 3 cuboid crystallites, which is achieved by introducing diammoniumcation-based 1,3-propanediamine dihydriodide (PDAI). The obtained perovskite is noted as PDAI-CsPbI 3 . The addition of PDAI can slow down the phase transition from intermediate phase to γ-phase CsPbI 3 and increase the size of cuboid crystallites. Meanwhile, the PDAI residue covering the surface of the final films can passivate defects and improve their PLQYs. Consequently, the PeLED based on such PDAI-CsPbI 3 film can reach a champion peak EQE of 15.03% and deep-red emission with high color purity. The T 50 lifetime (time to half of the initial brightness) can reach to 1.7 h under a high current density of 100 mA cm −2 . This PDAI-assisted one-step method also has a wide processing window. The large-area PDAI-CsPbI 3 -based PeLED we fabricated with active area of 9 cm 2 can reach a peak EQE of 10.30%. Results and DiscussionPDAI-CsPbI 3 perovskite films were prepared by spin-coating a precursor solution of formamidinium iodide (FAI), CsI, PDAI, Inorganic CsPbI 3 perovskite with high chemical stability is attractive for efficient deep-red perovskite light-emitting diodes (PeLEDs) with high color purity. Compared to PeLEDs based on ex-situ-synthesized CsPbI 3 nanocrystals/quantum dots suffering from low conductivity and efficiency droop under high current densities, in situ deposited 3D CsPbI 3 films from precursor solutions can maintain high conductivity but show high trap density. Here, it is demonstrated that introducing diammonium iodide can increase the size of colloids in the precursor solution, retard the phase-transition rate, and passivate trap states of the in-situ-formed cuboid crystallites. The PeLED based on the one-step-formed 3D CsPbI ...

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Section: Introductionmentioning

confidence: 99%

Deep‐Red Perovskite Light‐Emitting Diodes Based on One‐Step‐Formed γ‐CsPbI₃ Cuboid Crystallites

et al. 2021

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“…The total optical power dissipation proportion has obtained for the planar and dielectric (such as ZnO) patterned PeLED. The existing optical loss is mainly ascribed to the air mode, substrate mode, waveguide mode, surface plasmon polariton (SPP) mode induced by the metal electrode, and absorption loss [29]. The substrate mode is resulted from total internal reflection (TIR) [30] between air/substrate interface, the waveguide mode refers to a large amount of photons, which are trapped in the active layer and ITO anode due to the mismatched refractive indices of the stacked layer.…”

Section: A Radiation Pattern Analysis Of Vertical Dipole Locationmentioning

confidence: 99%

The Influence of the Emission Source on Outcoupling and Directivity of Patterned Perovskite Light-Emitting Diodes

Ren

Yan

et al. 2021

IEEE Photonics J.

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The perovskite light-emitting diodes (PeLEDs) have attracted considerable research interests in recent years due to their decent and tunable optoelectronic characteristics. Here, we unveil the properties of the emission source (e.g. location, polarization, etc.) and the influences of the incorporated nanopatterns on the light emission of PeLEDs by using the finite difference time domain (FDTD) method. The results indicated that the PeLEDs with nanopatterns not only show substantial improvement of light extraction intensity but also reveal a remarkable directivity. Moreover, the emission angle of the directional PeLEDs can be continuously engineered over 65 o by judicious selection of the nanopatterns. This work is of great importance for engineering highly directional and efficient luminescence devices.

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“…[ 26–29 ] Meanwhile, the PeLEDs with blue and white light emission have also experienced remarkable developments with EQEs over 12%. [ 30,31 ] In addition, perovskite lasers have turned out to be another prominent category among MHP‐based optoelectronic applications. Since the first observation of amplified spontaneous emission (ASE) in MAPbI 3 thin film under optical pumping (12 μJ cm −2 ), perovskite lasers have been intensively investigated.…”

Section: Introductionmentioning

confidence: 99%

Micro–Nanostructure‐Assisted Luminescence in Perovskite Devices

et al. 2021

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Metal halide perovskite (MHP) materials have demonstrated great advantages over conventional semiconductors for the next‐generation optoelectronics on account of their outstanding photophysical properties and facile solution processability. Among all the related researches, the suitable micro–nanostructures have been proven to be a direct and effective optical and photophysical management strategy, which is essential for improving the luminescent characteristics of MHP‐based luminescent optoelectronics, including light‐emitting diodes (LEDs) and lasers. Herein, the developments of representative optical micro–nanostructures for perovskite luminescence with different architectures are first introduced, including metal nanoparticles, 1D Bragg gratings, 2D nanostructures with and without periodicity, and MHP nanocrystals. Notably, the fabrication techniques of various counterparts in micro–nanostructures are systematically reviewed. Moreover, the recent practical applications of micro–nanostructures in MHP‐based materials and luminescent optoelectronics are discussed in details, which mainly involves localized surface plasmon resonance (LSPR)‐derived luminescence improvement, optical outcoupling manipulation, and stimulated light emission via optical micro–nanocavity. Lastly, the challenges and perspectives for micro–nanostructures toward future's MHP‐based luminescence applications are summarized.

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Utilization of Trapped Optical Modes for White Perovskite Light-Emitting Diodes with Efficiency over 12%

Cited by 103 publications

References 28 publications

Deep‐Red Perovskite Light‐Emitting Diodes Based on One‐Step‐Formed γ‐CsPbI₃ Cuboid Crystallites

Deep‐Red Perovskite Light‐Emitting Diodes Based on One‐Step‐Formed γ‐CsPbI₃ Cuboid Crystallites

The Influence of the Emission Source on Outcoupling and Directivity of Patterned Perovskite Light-Emitting Diodes

Micro–Nanostructure‐Assisted Luminescence in Perovskite Devices

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Utilization of Trapped Optical Modes for White Perovskite Light-Emitting Diodes with Efficiency over 12%

Cited by 103 publications

References 28 publications

Deep‐Red Perovskite Light‐Emitting Diodes Based on One‐Step‐Formed γ‐CsPbI3 Cuboid Crystallites

Deep‐Red Perovskite Light‐Emitting Diodes Based on One‐Step‐Formed γ‐CsPbI3 Cuboid Crystallites

The Influence of the Emission Source on Outcoupling and Directivity of Patterned Perovskite Light-Emitting Diodes

Micro–Nanostructure‐Assisted Luminescence in Perovskite Devices

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Product

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Deep‐Red Perovskite Light‐Emitting Diodes Based on One‐Step‐Formed γ‐CsPbI₃ Cuboid Crystallites

Deep‐Red Perovskite Light‐Emitting Diodes Based on One‐Step‐Formed γ‐CsPbI₃ Cuboid Crystallites