Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory

Tsai, Tsung‐Ming; Lin, Chun-Chu; Chen, Wen-Chung; Wu, Cheng-Hsien; Yang, Ching‐Chieh; Tan, Yung‐Fang; Wu, Po Kuei; Huang, Hui‐Chun; Zhang, Yong‐Ci; Sun, Li‐Min; Chou, Sheng‐Yao

doi:10.1016/j.jallcom.2020.154126

Cited by 23 publications

(11 citation statements)

References 47 publications

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“…Stop voltages of SET and RESET process are defined as V SET and V RESET . In general, two different switching types are defined as unipolar and bipolar [28][29][30], as illustrated in Figure 2. The unipolar switching mode is defined by the amplitude of the applied voltage bias while bipolar switching depends on the polarity of the applied voltage bias.…”

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

“…The unipolar switching mode is defined by the amplitude of the applied voltage bias while bipolar switching depends on the polarity of the applied voltage bias. In addition, as one of NVM devices, the endurance and retention properties of RRAM are also the presence of device reliability [4][5][6][7][28][29][30].…”

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

“…In the analog circuit of ANNs, RRAM devices act as substitution to synapses in order to provide connection function between neurons and information storage cells [140,141]. The ultra-small size of RRAM device is to increase the synapse density of ANNs, which is expected to reach the synapse density in human brain (~10 10 synapses/cm 2 ) [28,142]. As the key role during the information delivery process, a synapse is responsible for transmitting impulses from one neuron to another, which is considered to provide dynamical interconnections between two connecting neurons.…”

Section: Bionic Synaptic Applicationmentioning

confidence: 99%

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Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

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Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

Section: Bionic Synaptic Applicationmentioning

confidence: 99%

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Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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“…A tantalum layer supported nickel oxide-based device exhibited BRS, where the low resistance state (LRS) was followed by an Ohmic conduction behavior and the high resistance state (HRS) displayed a combined effect of Ohmic behavior and space-charge-limited conduction mechanism for the high and low-voltage regions, respectively . Compliance current dependent resistive switching in nickel oxide thin films for random-access memory application showed both URS and BRS behaviors where the HRS was dominated by the Schottky emission mechanism in both the cases . A nickel oxide-based flexible memory device with the resistance ratio of 10 3 exhibited Ohmic conduction mechanism for both LRS and HRS .…”

Section: Results and Discussionmentioning

confidence: 99%

Carbon Nitride-Supported Nickel Oxide Nanoparticles for Resistive Memory Application

Perla

Mallick

2021

ACS Appl. Nano Mater.

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An in situ protocol is described for the preparation of carbon nitride (CN)-supported nickel oxide nanoparticles using a high-temperature route. The microscopic characterization has confirmed the formation of highly dispersed nickel oxide nanoparticles within the range of 5–10 nm. The optical properties of the composite system have confirmed the functionalization of nanoparticles with the CN matrix, while the X-ray diffraction pattern indicates the formation of the monoclinic phase of nickel oxide. The electrical properties of the CN–nickel oxide (CNNO) hybrid system were evaluated in the form of a device that exhibited an electroforming process followed by a bipolar RESET and SET phenomena with an ON–OFF ratio of ∼2 × 104, recorded at 1.5 V. The resistive switching device, also known as memristor, exhibited excellent endurance (104 cycles) and retention (104 s) properties with a consistent ON–OFF ratio between the high resistance state and low resistance state. The electrical rewritable characteristics of the devices exhibited a current difference of 0.6 mA, between two Read voltages, READON–READOFF (R1–R0). In this study, the nonvolatile resistive memory behavior of the CNNO-based material was also displayed pictographically using 3 × 3 bit memory cells.

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“…Nonvolatile memory is the basic unit in a computer where data is stored to perform logical operations [1][2][3][4]. With the development of modern electronic technology and further miniaturization of silicon semiconductor devices, new memory technologies have been vigorously developed [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al layered double hydroxide films

Sun

Shi

2021

J Mater Sci: Mater Electron

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Co-Al layered double hydroxides (LDHs) thin films were prepared by drop-casting process on ITO coated glass substrates. And then the small molecule atrazine was adsorbed on the Co-Al LDHs film by impregnation method. Current-voltage characteristics revealed nonvolatile resistive switching in Co-Al LDHs adsorbed atrazine films. The Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co-Al LDHs Film has been investigated. By varying the atrazine adsorbed content in Co-Al LDHs thin films, the nonvolatile resistive switching behavior of device could be adjusted in a controlled way. Entirely different nonvolatile resistive switching characteristic, such as write-once read-many-times memory effect and rewritable memory effect are discriminable by the current-voltage curves.

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Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory

Cited by 23 publications

References 47 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Carbon Nitride-Supported Nickel Oxide Nanoparticles for Resistive Memory Application

Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al layered double hydroxide films

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