Utilizing Graphene Nano-Ribbon Transistor in Data Converters: A Comparative Study

Abstract

In recent years, efforts to perform more processing operation on a silicon chip have made a strong enthusiasm for making the circuit components smaller in order to reduce the power and increase the speed. Due to silicon constraints, there will be no possibility to follow Moore's law. That's why we should look for an alternative to silicon. Therefore, due to high mobility, high current density, and low noise, the study on Graphene Nano Ribbon (GNR) began. ADCs and DACs have a major share in the electronics industry. An ADC prepares signals for the digital world and microprocessor processing. There are different methods for converting analog to digital signals. Among them, due to unique features such as high speed; Flash ADC has attracted the attention of designers. In this research first, a model for simulating of the GNR field effect transistor (GNRFET), is introduced. Then, this model is used to design a flash ADC. The results of this study indicate that the designed circuit has a desirable performance as an ADC. In addition, compared to a same Si-CMOS sample, errors such as DNL, INL, Offset, and Full scale are reduced. Moreover, GNR-based ADC shows less power consumption. The maximum and minimum power consumption are equal to 27.8% and 17.6% which corresponds to 5-bit and 4-bit GNR-based flash ADCs compared with their CMOS counterpart. Moreover, this research indicates a significant improvement in the delay that is at least 86.3% and maximum 88.6% which corresponds to 5-bit and 3-bit GNR-based flash ADCs.

A Half Adder Design Based on Ternary Multiplexers in Carbon Nano-Tube Field Effect Transistor (CNFET) Technology

“…20 is developed with emphasis on the aim of using in circuit simulators and it has attracted attention in a bunch of circuit design purposes. 30,31 The transient analysis is carried out at the room temperature, 250 MHz operational (clock) frequency and at power supply of 0.9 V. Realistic inputs with rise/fall times of 1 psec are assumed. All the CNFETs used in these simulations are configured to have three tubes and default pitch value of 20 nm.…”

All-Graphene Nano-Ribbon FET Based Complete FPGA Design

“…The propagation delay of these logic gates is extracted and summarized in. 30 Using the max delay method, 27 timing parameters of DFF extracted. The results show that Master-Slave DFF's setup time, hold time, and propagation delay are 0.87 ps, 1.51 ps, and 6.5 ps, respectively.…”

“…Results of fabrication [14][15][16][17] and modelling of GNRFETs reported in the literature as SB-type. [18][19][20] Towards all-carbon integrated circuits (IC), several digital, 21-24 analog 25,26 and mixed circuits 27 using either CNT or GNRFETs is already reported. Due to the prominent position of FPGA in today's digital design, carbon-based FPGA is also needed.…”

Çay Atıklarından Türetilen Yüksek Performans Karbonun Transistörde İletim Kanal Materyali Olarak Uygulanması

“…Transistörlerde karbon materyaller, özellikle iletim kanal malzemesi olarak kullanılmakta ve elektriksel özelliklerin iyileştirilmesinde katkı sağlamaktadır [3]. Literatürde alan etkili transistörlerde karbon malzemelerin uygulamaları ile ilgili güncel çalışmalar bulunabilir [4][5][6][7][8][9]. Transistörlerde karbon materyaller; sinyallerin doğrultulması, esneklik sağlanması, düşük güç tüketimi, yüksek anahtarlama hızı, boyutların küçültülmesi ve düşük maliyet gibi nedenlerle kullanılmaktadır.…”