UV assisted pyrolysis of solution deposited BiFeO3 multiferroic thin films. Effects on microstructure and functional properties

Habouti, S.; Solterbeck, C.‐H.; Es‐Souni, M.

doi:10.1007/s10971-006-0201-y

Cited by 25 publications

(21 citation statements)

References 21 publications

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“…(e) and (c)]; therefore, we attributed the formation of ( l 00)‐oriented texture to the effects of the accumulated Bi and/or Fe species at the Pt/BFO interface. Because the BiFeO 3 on top of the Fe 2 O 3 buffer layer (not shown here) did not show a (100)‐preferred orientation, the existence of Bi–O interface layer could be responsible of high a ‐axis orientations . The same effect has been also observed on the stoichiometric BiFeO 3 thin films processed on Pt substrate using UV‐assisted pyrolysis and has been related to the effect of UV on the formation of template layer which favors the above orientation .…”

Section: Resultssupporting

confidence: 61%

“…attributed the (100) preferential orientation of 10% Bi‐excess BiFeO 3 to the lattice matching between (111)‐Pt and film . However (111)‐BiFeO 3 plane was also reported to match well with the (111)‐Pt ( d 111 = 0.227 nm for Pt and d 111 = 0.228 nm for BiFeO 3 ) . The seeding effect of Pt substrate was excluded in our case because the BFO without any accumulation of Bi at Pt/BFO interface did not have such a texture structure.…”

Section: Resultsmentioning

confidence: 81%

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Effects of Bismuth Oxide Buffer Layer on BiFeO₃ Thin Film

et al. 2014

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Bismuth ferrite (BiFeO3) thin films with Bi2O3 buffer layers were prepared on Si/SiO2/TiO2/Pt substrates by sol–gel‐derived spin‐coating method. The structural and electrical properties of BiFeO3 was effectively improved by adding a Bi2O3 buffer layers either at Pt/BiFeO3 interface or on BiFeO3 surface, also strongly depending on the positions and the annealing conditions of buffer layers. A 500°C‐annealed Bi2O3 buffer layer could act as a Bi source for compensating Bi volatilization and a diffusion barrier for species from BiFeO3. A near stoichiometric BiFeO3 with less defects and substrate contamination was obtained by employing a 500°C‐annealed Bi2O3 buffer layer in between Pt substrate and BiFeO3. The structure change in BiFeO3 led by such a buffer layer should result from the interfacial constraint between buffer layer and BiFeO3. Furthermore, this crystalline BiFeO3 specimen exhibited a highly (100)‐textured, where this preferred orientation was attributed to the accumulation of Bi at Pt/BFO interface. Therefore, the Pt/500°C‐annealed Bi2O3/BiFeO3/Pt thin film exhibited the good ferroelectric and magnetic properties. As compared to the usual method for controlling BiFeO3 composition by adding excess Bi, this study indicates the more advantages using a Bi2O3 buffer layer.

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Section: Resultssupporting

confidence: 61%

Section: Resultsmentioning

confidence: 81%

Effects of Bismuth Oxide Buffer Layer on BiFeO₃ Thin Film

et al. 2014

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“…2͒. Nondoped BFO has been presented elsewhere, 4,5 and was shown to be characterized by large grains, approximately 500 nm in size. Although the annealing temperature of BFO-LMO is higher, the mean grain size is decreased which might be attributed to solute effects on grain growth known for many systems in standard textbooks.…”

Section: Resultsmentioning

confidence: 99%

“…6 In pure BFO, the leakage current mechanism seems to be governed by deep ionized traps purportedly due to the existence of Fe 2+ species. 5,7 Stabilizing the Fe 3+ ions would therefore help improve the resistivity of BFO.…”

Section: Introductionmentioning

confidence: 99%

La Mn O 3 effects on the ferroelectric and magnetic properties of chemical solution deposited BiFeO3 thin films

Habouti

Solterbeck

Es‐Souni

2007

Journal of Applied Physics

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“…Habouti et al reported substantial improvement in leakage resistance for their sol-gel BiFeO 3 films deposited with assistance of UV pyrolysis (UVP) [84]. Compared to the BiFeO 3 films deposited with no UV pyrolysis (NP), the UVP films had better crystallinity as inferred from the stronger intensities of the peaks in diffractogram.…”

Section: Chemical Solution Depositionmentioning

confidence: 99%