UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates

Jeschke, Jörg; Martens, Martin; Knauer, A.; Kueller, V.; Zeimer, U.; Netzel, Carsten; Kühn, Christian; Krueger, Felix; Reich, Christoph; Wernicke, Tim; Kneissl, Michael; Weyers, M.

doi:10.1109/lpt.2015.2448127

Cited by 19 publications

(10 citation statements)

References 14 publications

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“…Recently, tremendous efforts have been made to demonstrate edge-emitting III-nitride DUV lasers with low thresholds and the shortest wavelength of 237 nm by optical pumping. [1][2][3][4][5][6][7][8][9][10][11][12] Achieving effective ptype doping in wide-bandgap III-nitride structures becomes a next critical step to realize the DUV laser diodes (LDs) by current injection. 13,14 Bulk AlN and sapphire are two common substrates to grow wide-bandgap AlGaN heterostructures.…”

Section: Onset Of Surface Stimulated Emission At 260 Nm From Algan Mumentioning

confidence: 99%

“…Some of the aforementioned edge-emitting DUV lasers were demonstrated on the sapphire substrates. [1][2][3][4] These studies indicate that in spite of lattice and thermal mismatch, it is possible to obtain high internal quantum efficiency (IQE) and thus high material gain to achieve low-threshold lasing by reducing the dislocation density in III-nitride AlGaN heterostructures to a relatively low level. 15,16 In comparison to the edge-emitting lasers, verticalcavity surface-emitting lasers (VCSELs) possess advantageous characteristics including high-speed modulation, good beam quality, and control of production process.…”

Section: Onset Of Surface Stimulated Emission At 260 Nm From Algan Mumentioning

confidence: 99%

“…Based on recent studies of SE from AlGaN heterostructures grown on c-plane sapphire substrates, the optical polarization of the SE at this wavelength is believed to be transverse-electric (TE) polarized. [1][2][3] The TEpolarized SE is ideal for emission extraction perpendicular from the wafer surface. 2 As the pumping power density increased, the relative intensities of SPE and SE peaks changed dramatically, suggesting continuous amplification of the SE.…”

Section: Onset Of Surface Stimulated Emission At 260 Nm From Algan Mumentioning

confidence: 99%

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Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

Xie

Ponce

et al. 2015

Applied Physics Letters

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We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm 2. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at k $ 257.0 nm with a full width at half maximum (FWHM) of $12 nm and a superlinearly amplified SE peak at k $ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of $260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs). V

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Section: Onset Of Surface Stimulated Emission At 260 Nm From Algan Mumentioning

confidence: 99%

Section: Onset Of Surface Stimulated Emission At 260 Nm From Algan Mumentioning

confidence: 99%

Section: Onset Of Surface Stimulated Emission At 260 Nm From Algan Mumentioning

confidence: 99%

See 1 more Smart Citation

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

Xie

Ponce

et al. 2015

Applied Physics Letters

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“…Much attention has been paid to improving the material quality over the past 20 years, for example, reducing threading dislocation densities (TDDs) on sapphire substrates with various techniques, and TDDs in AlGaN epilayers on sapphire as low as around mid‐10 8 cm −2 are obtained. [ 11–14 ] However, given the enduring challenge of p‐type doping, the improved AlGaN epilayer quality is mainly tested by the optically pumped AlGaN quantum well laser structures. [ 12–27 ] Nonetheless, the optically pumped laser structures can be further used to examine and optimize the material properties as well as laser design parameters.…”

Section: Introductionmentioning

confidence: 99%

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Yin

Zhao

2021

Physica Status Solidi (b)

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Herein, aluminum gallium nitride (AlGaN)/AlN double‐heterostructure (DH) laser at 287 nm with a lasing threshold of 530 kW cm−2 is shown. The laser structure is grown on the AlN‐on‐sapphire template by molecular beam epitaxy. This lasing threshold is drastically reduced compared with the previously reported AlGaN DH lasers at 297 nm with a threshold of around 1 MW cm−2. The detailed studies indicate that this improvement is mainly attributed to the control of defect formation largely due to the increased growth temperature of the AlGaN active layer. This is consistent with the improved internal quantum efficiency at low excitations. Moreover, the control of Al vacancy related point defects is clearly demonstrated by the absence of defect emission in the visible band.

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“…The quality of the AlN film is essential for the epitaxial growth of high-quality AlGaN and high-efficiency DUV LEDs. These AlN films are generally grown on sapphire substrates because sapphire substrates are low-cost and have high DUV-transparency [10,11,12,13,14,15,16]. However, the mismatches of lattice constants and thermal expansion coefficients between AlN film and sapphire substrate induces stress and dislocations, thereby reducing the internal quantum efficiency and degrading the optical and electrical performance of DUV LEDs [17,18,19].…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Zhao

Lei

et al. 2019

Nanomaterials

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High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a nanometer-scale-thick AlN nucleation layer (NL). Three kinds of nanometer-scale-thick AlN NLs, including in situ low-temperature AlN (LT-AlN) NL, oxygen-undoped ex situ sputtered AlN NL, and oxygen-doped ex situ sputtered AlN NL, were prepared for epitaxial growth of AlN films on sapphire substrates. The influence of nanoscale AlN NL thickness on the optical transmittance, strain state, surface morphology, and threading dislocation (TD) density of the grown AlN film on sapphire substrate were carefully investigated. The average optical transmittance of AlN film on sapphire substrate with oxygen-doped sputtered AlN NL was higher than that of AlN films on sapphire substrates with LT-AlN NL and oxygen-undoped sputtered AlN NL in the 200–270 nm wavelength region. However, the AlN film on sapphire substrate with oxygen-undoped sputtered AlN NL had the lowest TD density among AlN films on sapphire substrates. The AlN film on sapphire substrate with the optimum thickness of sputtered AlN NL showed weak tensile stress, a crack-free surface, and low TD density. Furthermore, a 270-nm AlGaN-based DUV LED was grown on the high-quality and crack-free AlN film. We believe that our results offer a promising and practical route for obtaining high-quality and crack-free AlN film for DUV LED.

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UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates

Cited by 19 publications

References 14 publications

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

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