UV Dosimeters Based on Metal-Oxide-Semiconductor Structures Containing Si Nanocrystals

Arias, Abraham; Nedev, N.; Nesheva, D.; Curiel, Mario; Manolov, E.; Matéos, David; Dzurkov, V; Valdez, Benjamín; Contreras, O.; Herrera, R.; Bineva, I.; Siqueiros, J. M.

doi:10.1166/sl.2015.3337

Cited by 2 publications

(1 citation statement)

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“…[8][9][10][11][12] We have shown that MOS structures with silicon nanocrystals are also promising for detectors of ionizing radiation. 13,14 Most frequently, Si nanoparticles are grown by high temperature thermal annealing of nonstoichiometric silicon oxides, but electron or ion beams irradiation has also been applied as a tool for growing and processing Si nanoparticles. Phase separation in Si-enriched silicon oxide films 15,16 as well as annealing of Si nanocrystals 17 have been reported under irradiation with high-energy (several tens of MeV) ion beams.…”

Section: Introductionmentioning

confidence: 99%

Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films

Hristova-Vasileva

Petrik

Nesheva

et al. 2018

Journal of Applied Physics

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Homogeneous films from SiO1.3 (250 nm thick) were deposited on crystalline Si substrates by thermal evaporation of silicon monoxide. A part of the films was further annealed at 700 °C to grow amorphous Si (a-Si) nanoclusters in an oxide matrix, thus producing composite a-Si-SiO1.8 films. Homogeneous as well as composite films were irradiated by 20-MeV electrons at fluences of 7.2 × 1014 and 1.44 × 1015 el/cm2. The film thicknesses and optical constants were explored by spectroscopic ellipsometry. The development of the phase composition of the films caused by the electron-beam irradiation was studied by transmission electron microscopy. The ellipsometric and electron microscopy results have shown that the SiOx films are optically homogeneous and the electron irradiation with a fluence of 7.2 × 1014 el/cm2 has led to small changes in the optical constants and the formation of very small a-Si nanoclusters. The irradiation of the a-Si-SiOx composite films caused a decrease in the effective refractive index and, at the same time, an increase in the refractive index of the oxide matrix. Irradiation induced increase in the optical band gap and decrease in the absorption coefficient of the thermally grown amorphous Si nanoclusters have also been observed. The obtained results are discussed in terms of the formation of small amorphous silicon nanoclusters in the homogeneous layers and electron irradiation induced reduction in the nanocluster size in the composite films. The conclusion for the nanoparticle size reduction is supported by infrared transmittance results.

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Section: Introductionmentioning

confidence: 99%

Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films

Hristova-Vasileva

Petrik

Nesheva

et al. 2018

Journal of Applied Physics

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Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation

Nesheva

Petrik

Hristova-Vasileva

et al. 2019

Nuclear Instruments and Methods in Physics Research Section B:

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UV Dosimeters Based on Metal-Oxide-Semiconductor Structures Containing Si Nanocrystals

Cited by 2 publications

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Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films

Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films

Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation

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UV Dosimeters Based on Metal-Oxide-Semiconductor Structures Containing Si Nanocrystals

Cited by 2 publications

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Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films

Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films

Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation

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Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation