UV Enhanced Indium-Doped ZnO Nanorod Field Emitter

Chang, Shoou–Jinn; Duan, Bi-Gui; Liu, Chung-Wei; Hsiao, C. H.; Young, Sheng-Joue; Huang, Chien-Sheng

doi:10.1109/ted.2013.2280910

Cited by 12 publications

(7 citation statements)

References 31 publications

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“…The morphology, dimension, and apex geometry of NSs also influence FE properties. 46 This phenomenon can be explained by electric field theory and the band diagram shown in Fig. 16.…”

Section: Journal Of the Electrochemical Society 164 (5) B3013-b3028 mentioning

confidence: 93%

“…FE cathodes from ZnO nanostructures have gained significant interest because of their valuable properties, including their high aspect ratio, low work function, general stability, and high electrical conductivity. [41][42][43][44][45][46][47] Compared with other materials, such as GaN, ZnO exhibits better characteristic and potential to fabricate UV photosensors. Highperformance solid-state UV photosensors have attracted interest in recent years.…”

mentioning

confidence: 99%

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Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

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In recent decades, ZnO-based nanostructures have attracted considerable attention because of their various possible morphologies, large surface-to-volume ratios, non-toxicity, easy synthesis, low cost, and excellent physical properties for fabricating highperformance electronic, magnetic, and optoelectronic devices. This review article focuses on recent advances in Al-, Ga-, and In-doped ZnO nanostructures, including a brief overview of the hydrothermal method and aqueous solution methods. Among these strategies, ZnO nanostructures synthesized via the hydrothermal method exhibits distinct advantages, such as low growth temperature, low cost, and large resultant surface area, as well as applicability in fabricating field emission (FE) devices and photosensors. FE devices have gained widespread attention for their applications in flat-panel displays and other electronic devices, such as microwave amplifiers, X-ray tubes, cathode-ray tube monitors, and electron microscopes. FE devices are influenced by interrelated factors, including emitter geometry, crystal structure, conductivity, work function, spatial distribution of emitting centers, and nanostructure density of nanorods. An applied electric field bends the surface barrier to form a triangular barrier, and the excited electrons tunnel easily to generate the emission current. A large number of excited electrons are stored at the tips of nanowires, thereby causing subsequent point discharge that reduces the electric field. ZnO-based ultraviolet (UV) photosensors are frequently used in environmental monitoring, securing space-to-space communication, flame sensing, and chemical biological analysis. ZnO UV photosensors are used to manufacture various structures, such as p-n heterojunction photodiodes, metal-semiconductor-metal photosensors, and Schottky photodiodes. The resistance of pure n-type ZnO nanostructure is high. ZnO nanostructures are commonly doped with other elements. To improve the electrical properties of ZnO nanostructures, donor dopants for ZnO, such as group III elements (Al, Ga, and In), can be used. The optical and electrical properties of fabricated ZnO optoelectronic devices can also be improved by doping with group III elements. Furthermore, as a material with a direct bandgap (3.37 eV), ZnO can easily absorb wavelengths in the UV range. Thus, illumination under UV can enhance the FE capacity of ZnO nanowires. Methods that enhance the performance of field emitters and photosensors are introduced in this review paper. We hope that this review paper can provide a useful reference to those who are interested in ZnO-based field emission devices and photosensors. ZnO-based nanostructures comprise a highly promising key group of II-VI semiconductor materials. ZnO-based nanostructures have numerous advantages, including a wide bandgap of 3.37 eV, a direct bandgap structure at room temperature, a large exciton binding energy of approximately 60 meV, thermal stability at room temperature (significantly higher than that of GaN), non-toxicity, manufactu...

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“…The morphology, dimension, and apex geometry of NSs also influence FE properties. 46 This phenomenon can be explained by electric field theory and the band diagram shown in Fig. 16.…”

Section: Journal Of the Electrochemical Society 164 (5) B3013-b3028 mentioning

confidence: 93%

mentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

Self Cite

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“…In this study, we have chosen indium doping for on-current enhancement of ZnO nanorod FETs because indium has an ionic radius similar to that of zinc and is less prone to oxidation. [29][30][31][32][33] Interestingly, we found that In doping could inuence the growth behavior of ZnO nanorods to some degree. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis illustrate that indium doping benets the horizontal growth of ZnO nanorods and results in a better at morphology.…”

Section: Introductionmentioning

confidence: 89%

Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

Zhu

Wen

et al. 2017

RSC Adv.

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“…Moreover, the field emission property can effectively be improved by doping with In 3+ , Al 3+ and Ga 3+ in ZnO nanostructures because of the increased carrier concentration, which results in the increase of the field enhancement factor and the reduction of the work function. 13,[29][30][31]…”

Section: Resultsmentioning

confidence: 99%

Enhanced Field Emitter Base on Indium-Doped ZnO Nanostructures by Aqueous Solution

Liu

Chang

Young

2016

ECS J. Solid State Sci. Technol.

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In this study, indium doped ZnO (IZO) nanostructures were fabricated successfully on a glass substrate. It was found that the IZO nanostructures grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The composition of the doped zinc oxide (ZnO) nanostructures was confirmed by X-ray diffraction (XRD) and energy dispersive X-ray. The turn-on fields of ZnO and IZO nanostructures were 4.21 and 3.86 V/μm, and field enhancement factors (β) were 2695 and 5015, respectively. These results show that the field emission properties of the IZO nanostructures are better than those of ZnO nanostructures.

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UV Enhanced Indium-Doped ZnO Nanorod Field Emitter

Cited by 12 publications

References 31 publications

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

Enhanced Field Emitter Base on Indium-Doped ZnO Nanostructures by Aqueous Solution

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