UV-enhanced silicon avalanche photodiodes

Myers, Richard A.; Farrell, R.; Riccardi, Suzannah L.; McClish, M.

doi:10.1117/12.2003993

Cited by 2 publications

(1 citation statement)

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“…In 2012, Shimotori et al utilized CMOS technology to fabricate a silicon avalanche photodiode, which exhibited a responsivity of 2.61 A/W at 405 nm and an avalanche gain of 36.8 at a bias voltage of 9.1 V [11]. In 2013, an internal quantum efficiency of approximately 60% at 400 nm was realized in Si-APD by adjusting the doping concentration in the near-surface region by Myers et al, improving the responsivity in the ultraviolet range [12]. In 2017, Napiah et al reported the development of a p-CMOS-type Si-APD using 0.18 µm CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Research on the Structure Design of Silicon Avalanche Photodiode with Near-Ultraviolet High Responsivity

Guo,

Chen,

Zheng

et al. 2023

Photonics

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To improve the low responsivity of the silicon avalanche photodiode in the near-ultraviolet wavelength range, we designed a near-ultraviolet highly responsive Si-APD basic structure with a multiplication layer neighboring the photosensitive surface through the analysis of the optical absorption characteristics, junction breakdown characteristics, and avalanche multiplication characteristics. The dark current and electric field distribution of the device were investigated. Meanwhile, the structural parameters of the surface non-depleted layer, multiplication layer, and absorption layer were optimized. It was found that the breakdown voltage of the device is 21.07 V. At an applied bias voltage of 20.02 V, the device exhibits a responsivity of 6.79–14.51 A/W in the wavelength range of 300–400 nm. These results provide valuable insights for the design of silicon avalanche photodiode with high responsivity in the near-ultraviolet range.

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Section: Introductionmentioning

confidence: 99%