UV irradiation effects on the bonding structure and electrical properties of ultra low-k SiOC(–H) thin films for 45 nm technology node

Choi, Chi Kyu; Kim, Chang Young; Navamathavan, R.; Lee, Heang Seuk; Woo, Jiwon; Hyun, Myung Taek; Lee, Heon Ju; Jeung, Won Young

doi:10.1016/j.cap.2011.05.004

Cited by 11 publications

(8 citation statements)

References 15 publications

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“…Collectively, the AFM and ellipsometry data lead us to conclude with confidence that the UV/O 3 treatments reported here do not affect the mechanical, optical, or electrical properties of the SiCOH low-k films. This is in contrast with what happens with the typical plasma treatments used to remove photoresist masks and with other cleaning processes, in which case significant damage has been reported. ,,,, Our results also contradict a previous report that claims significant removal of CH 3 groups from SiCOH films upon exposure of the films to UV radiation leading to measurable changes in structural, mechanical, and electrical characteristics …”

Section: Resultscontrasting

confidence: 98%

“…Figure displays representative spectra for the IBM1 and IBM2 samples. Several peaks are observed in all traces, which we have assigned in Table by following previous reports and conventional group assignments. ,− The strongest features in the 1000–1200 cm –1 range correspond to modes associated with the Si–O–Si bonding network, whereas all of the other peaks can be assigned to organic moieties, specifically terminal methyl groups. Not many differences are obvious among the spectra of the different samples, but upon close inspection some noticeable and meaningful variations are observed.…”

Section: Resultsmentioning

confidence: 58%

“…31,34,35,40,43 Our results also contradict a previous report that claims significant removal of CH 3 groups from SiCOH films upon exposure of the films to UV radiation leading to measurable changes in structural, mechanical, and electrical characteristics. 44 To settle the discrepancy mentioned above, the state of the organic terminal groups in the SiCOH films was further assessed by using FTIR-ATR. Figure 6 displays representative spectra for the IBM1 and IBM2 samples.…”

Section: Resultsmentioning

confidence: 99%

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Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications

Guo

Qin

Zaera

2016

ACS Appl. Mater. Interfaces

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A protocol has been developed to selectively process low-k SiCOH dielectric substrates in order to activate or deactivate them toward the deposition of thin solid films by chemical (CVD or ALD) means. The original SiCOH surfaces are hydrophobic, an indication that they are alkyl- rather than silanol-terminated and that, consequently, they are fairly unreactive. However, the chemical-mechanical polishing (CMP) sometimes done during microelectronics fabrication renders them hydrophilic and reactive. It was shown here that silylation of the CMP-treated surfaces with any of a number of well-known silylation agents such as HMDS, ODTS, or OTS caps the reactive silanol surface groups and turns them back to being hydrophilic and unreactive. Further exposure of any of the passivated surfaces to a combination of ozone and UV radiation reinstates their hydrophilicity and chemical activity. Importantly, it was also demonstrated that all these changes could be induced without altering the original mechanical, optical, or electrical properties of the samples: atomic force microscopy (AFM) images show no increase in roughness, ellipsometry measurements yield the same values for the index of refraction and dielectric constant, and infrared absorption spectroscopy attests to the preservation of the organic fragments present in the original SiCOH samples. The chemical selectivity of the resulting surfaces was tested for the atomic layer deposition (ALD) of HfO2 films, which could be grown only on the UV/O3 treated substrates.

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Section: Resultscontrasting

confidence: 98%

Section: Resultsmentioning

confidence: 58%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications

Guo

Qin

Zaera

2016

ACS Appl. Mater. Interfaces

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“…Reduced leakage currents in the UVcured films are likely due to UV-induced elimination of silanol groups via a condensation reaction to form Si-O-Si bonds in these materials. 17 This behavior is consistent with results observed by Choi et al, 15 where the leakage current density was observed to decrease for UV-cured SiCOH samples with increasing UV-curing time. As-deposited films also showed reduced breakdown voltages compared to UV-cured films (10 MV/cm versus 13 MV/cm, respectively).…”

Section: Resultssupporting

confidence: 91%

The effects of plasma exposure and vacuum ultraviolet irradiation on photopatternable low-k dielectric materials

Nichols

Mavrakakis

Lin

et al. 2013

Journal of Applied Physics

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The effects of plasma exposure and vacuum-ultraviolet (VUV) irradiation on photopatternable low-k (PPLK) dielectric materials are investigated. In order to examine these effects, current-voltage measurements were made on PPLK materials before and after exposure to a variety of inert plasma-exposure conditions. In order to examine the effects of photon irradiation alone, PPLK samples were also exposed to monochromatic synchrotron radiation with 10 eV photon energy. It was found that plasma exposure causes significant degradation in electrical characteristics, resulting in increased leakage-currents and decreased breakdown voltage. X-ray photoelectron spectroscopy measurements also show appreciable carbon loss near the sample surface after plasma exposure. Conversely, VUV exposure was found to increase breakdown voltage and reduce leakage-current magnitudes.

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“…For example, an increase of the dielectric constant has been reported for the low-k SiOC, which is related to the breakage of Si−Me bonds that are replaced with Si−O bonds. 51 Also, a thickness decrease of the low-k thin film has been observed. 52 Therefore, it is important to study the effect of UV irradiation on the properties of the low-k SiOC to optimize the irradiation time for the growth activation.…”

Section: ■ Results and Discussionmentioning

confidence: 89%

Substrate-Dependent Area-Selective Atomic Layer Deposition of Noble Metals from Metal β-Diketonate Precursors

et al. 2022

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Area-selective ALD of Ir, Ru, and Rh with excellent substrate selectivity was achieved by using metal β-diketonates, i.e., Ir(acac) 3 , Ru(thd) 3 , and Rh(acac) 3 , as precursors with either O 2 or air as a coreactant. Native SiO 2 and Ru were identified as growth surfaces while low-k SiOC, native oxide terminated Cu and Co, Al 2 O 3 , ZrO 2 , and HfO 2 were identified as the nongrowth surfaces. UV (254 nm) irradiation in air was proven efficient to activate the low-k SiOC surface for the noble metal growth. UV exposure of 1 min was sufficient for the growth activation yet without causing any damage to the low-k material. Selective growth of the noble metals was successfully demonstrated on a UV-irradiated test chip that has micro-and nanometer-scale low-k SiOC/Cu patterns. At the optimal selective deposition temperatures, that is 225 °C for the Ir, 300 °C for the Ru, and 250 °C for the Rh, films with a thickness of at least 10 nm for Ir and ∼30 nm for Ru and Rh can be selectively deposited on the UV-activated low-k SiOC regions, while no growth occurs on Cu regions, as characterized by SEM, TEM, and EDS.

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UV irradiation effects on the bonding structure and electrical properties of ultra low-k SiOC(–H) thin films for 45 nm technology node

Cited by 11 publications

References 15 publications

Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications

Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications

The effects of plasma exposure and vacuum ultraviolet irradiation on photopatternable low-k dielectric materials

Substrate-Dependent Area-Selective Atomic Layer Deposition of Noble Metals from Metal β-Diketonate Precursors

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