UV-Nanoimprint Lithography (NIL) Process Simulation

Hirai, Yoshihiko

doi:10.2494/photopolymer.23.25

Cited by 20 publications

(16 citation statements)

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“…The material data for Ag was obtained from ref. 32 by Rakic et al A mesh with maximum element size of 15 nm was used in detailed areas such as the nanorods and nanoaperture. Reectance spectra were calculated using normal incidence port excitation of a plane wave linearly polarized either parallel or perpendicular to the longaxis of the rods and the reectance calculated from the Sparameter |S 11 | 2 .…”

Section: Simulationsmentioning

confidence: 99%

“…the size of the cavities, the density of structures and imprint area) is one of the signicant factors affecting the resist lling process into cavities in the mould. [25][26][27][28][29][30][31][32] Previous simulations of the NIL process performed by Yin et al showed that an inhomogeneous imprint depth resulted when a mould composed of both microand nanoscale features was used for NIL due to variations across the sample in the resist lling rate. 31 A similar effect was observed when a mould with various pattern densities was used in the NIL process.…”

Section: Introductionmentioning

confidence: 99%

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Multilevel nanoimprint lithography with a binary mould for plasmonic colour printing

et al. 2020

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Section: Simulationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Multilevel nanoimprint lithography with a binary mould for plasmonic colour printing

et al. 2020

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“…However, precise replication of complicated patterns over a wide area is not easy. Current nanoimprint lithography has recently progressed significantly [18][19][20][21][22][23][24][25][26][27]. Very small patterns can be replicated and practical applications in the manufacture of devices and components is widespread.…”

Section: Current Nanoimprint Lithographymentioning

confidence: 99%

The Molded Mask Method: The Origin of Nanoimprint Lithography

Fujimori

2016

J. Photopol. Sci. Technol.

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This paper describes the invention of the molded mask method in the 1970s, which is considered to be the origin of current nanoimprint lithography. The molded mask method was proposed and developed in order to fabricate fine patterns and three-dimensional structures by combining molding technology and dry etching technology. The concept was the same as the technology now called nanoimprint lithography. In the 1970s, we had the idea that even very fine patterns (as small as ten nanometers across) could be fabricated by the molded mask method based on the similarity of this approach with specimen preparation for electron microscopy. How the molding mask method was born, the results of demonstration experiments, and studies conducted in the 1970s to solve technical problems are described in this paper. Recent progress in and applications of current nanoimprint lithography are also discussed with reference to the molded mask method.

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“…As described above, Prof. Hirai's group has clarified the phenomenon in each individual process of UV Nanoimprint by the simulation technique. Their important research results have been presented at the Conference of Photopolymer Science and Technology 2010 and the paper has been published in Journal of Photopolymer Science and Technology [11]. These results are useful for not only the clarification of various phenomena of UV nanoimprint but also for understanding the behavior of UV curable resin in the nanometer or micrometer dimension.…”

mentioning

confidence: 96%

“…Hirai's group has clarified one by one the various phenomena of the UV nanoimprint process by the simulation technique [7][8][9][10][11]. This award-winning paper is a review of these results.…”

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confidence: 99%