UV Random Lasing Action in p‐SiC(4H)/i‐ZnO–SiO₂ Nanocomposite/n‐ZnO:Al Heterojunction Diodes

Abstract

UV random lasing in p–i–n ZnO‐based heterojunction diodes is achieved. The UV emission originates from the use of an intrinsic ZnO–SiO2 nanocomposite layer; the use of ZnO powders can improve the electrical‐to‐optical conversion efficiency of the heterojunction. The patterned ZnO clusters in the SiO2 matrix enhance the quality of the random media (see figure) thus sustaining the random lasing action. If low‐index, p‐doped, wide‐bandgap materials are used as the hole‐injection layer, strong coherent random lasing could be achieved.

Electrically pumped ultraviolet random lasing from heterostructures formed by bilayered MgZnO films on silicon

“…[3][4][5][6] Nevertheless, the electrically pumped RL from SiO 2 -ZnO nanocomposites and that from ZnO polycrystalline films were realized until years 2006 and 2007, respectively. 7,8 MgZnO alloy, as a key member of ZnO family, is regarded as a category of significant UV optoelectronic materials because its lattice constants are close to those of ZnO and, moreover, the band gap energy is adjustable in a wide UV region. 9 To date, the optically pumped RL from MgZnO films has been well demonstrated.…”

Controllable fabrication and optical properties of Sn-doped ZnO hexagonal microdisk for whispering gallery mode microlaser

“…[1][2][3] As a wide bandgap (3.37 eV) semiconductor material with a large exciton binding energy (60 meV), ZnO is considered as a promising material for ultraviolet lasers since the first report on ultraviolet stimulated emission from ZnO thin film in 1997. [4][5][6][7][8][9] It is worth noticing that ZnO can present a great number of micro/nanostructures where lasing actions have been observed and widely investigated. The ZnO micro/nanostructures are, therefore, considered of potential applications as micro-light source and optical communication components in the optoelectronic microdevices.…”

Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single-heterostructure diode

“…Recently, much effort has been invested in ZnO-based random laser research for various potential applications such as bio-sensing, speckle-free imaging, medical diagnostics, and information storage and defense [6][7][8]. There have been many reports of ZnO-based homojunction LED devices [9][10][11][12], and also, several ZnO-based random lasing device structures have already been demonstrated, including homojunctions, metal-insulator-semiconductor (MIS) structures, and heterostructured devices with the combination of n-ZnO and other p-type materials [13][14][15][16][17][18][19][20]. For practical applications, it is essential to significantly enhance the output power of the device and also have controllability on the wavelength of the random lasing modes [19,21].…”