UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

Baskaran, S.; Shunmugathammal, M.; Sivamani, C.; Ravi, S.; Murugapandiyan, P.; Ramkumar, Nirupama

doi:10.1007/s12633-022-01846-w

Cited by 8 publications

(2 citation statements)

References 41 publications

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“…Furthermore, researchers are actively exploring the use of UWBG materials such as AlN and h-BN thin interlayers for β-Ga 2 O 3 SBDs to achieve higher Schottky barrier heights and BVs. Recently, Baskaran et al [127] investigated an AlN/β-Ga 2 O 3 high-electron-mobility transistor (HEMT) on a SiC substrate for power converters and RF applications. Similar to AlN, BN is emerging as a UWBG material with a bandgap of ~6.0 eV and a critical field of ~10 MV/cm [128][129][130].…”

Section: β-Ga 2 O 3 Heterostructures With Other Uwbg Semiconductorsmentioning

confidence: 99%

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Herath Mudiyanselage,

Da,

Adivarahan

et al. 2024

Electronics

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During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

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Section: β-Ga 2 O 3 Heterostructures With Other Uwbg Semiconductorsmentioning

confidence: 99%

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Herath Mudiyanselage,

Da,

Adivarahan

et al. 2024

Electronics

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“…Furthermore, along with the choice of suitable material, device design strategy is crucial to fully attain the potential of any material. Recently, several groups have demonstrated Ga 2 O 3 -based HEMTs with buffer layer engineering, gate and substrate engineering, etc [13][14][15]. Various other device design strategies, such as the implementation of a highly doped cap layer with a sub-micron gate recess process [16], incorporation of a highly doped channel with a T-shaped gate [17], and ultra-scaled delta-doped FET [18], have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Realization of an ultra-scaled novel Ga₂O₃ FinFET for sub-terahertz applications

Goyal,

Kaur

2024

Semicond. Sci. Technol.

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This study involves in-depth simulations focused on gate electrode and channel doping engineering on ultra-scaled Ga2O3 FinFETs. TCAD Silvaco was employed as the simulation tool to explore the suitability of these designs for sub-terahertz applications. The focus of the present study is the simultaneous enhancement in current drivability as well as reduction in parasitic capacitances without any trade-off, in order to achieve superior performance for sub-terahertz application. Along with the analog characteristics of the proposed device, various critical high frequency figure of merits have also been evaluated. Furthermore, scattering – parameters have also been studied with variations in frequency in order to get insights about the performance of the proposed device at high frequencies. In addition, a thorough comparison of the proposed device has been carried out with the conventional device. It has been demonstrated that the proposed device is an excellent contender for the ultra-high frequency applications with remarkable high frequency figure of merits.

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Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

Murugapandiyan,

Sri Rama Krishna,

Revathy

et al. 2024

J. Electron. Mater.

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UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

Cited by 8 publications

References 41 publications

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Realization of an ultra-scaled novel Ga₂O₃ FinFET for sub-terahertz applications

Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

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UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

Cited by 8 publications

References 41 publications

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Realization of an ultra-scaled novel Ga2O3 FinFET for sub-terahertz applications

Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

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Realization of an ultra-scaled novel Ga₂O₃ FinFET for sub-terahertz applications