2018
DOI: 10.1063/1.5012597
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V-I characteristics of X-ray conductivity and UV photoconductivity of ZnSe crystals

Abstract: This article outlines the resulting experimental V-I curves for high resistance ZnSe single crystals at temperatures of 8, 85, 295, and 420 K under three intensities of X-ray and UV excitations (hvUV > Eg). This paper considers the major factors that affect the nonlinearity in the V-I curves of high resistance ZnSe. We observe superlinear dependences at low temperatures, shifting to sublinear at room temperature and above. However, at all temperatures, we have initial linear areas of V-I curves. Using t… Show more

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Cited by 10 publications
(2 citation statements)
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“…It is confirmed experimentally by the dose dependencies of the luminescence at low temperatures [20]. It also means that not all generated free charge carriers are involved in the conductivity and localization on deep traps [23,24].…”
Section: The Light Sum Accumulation In Znse Single Crystalsmentioning
confidence: 76%
“…It is confirmed experimentally by the dose dependencies of the luminescence at low temperatures [20]. It also means that not all generated free charge carriers are involved in the conductivity and localization on deep traps [23,24].…”
Section: The Light Sum Accumulation In Znse Single Crystalsmentioning
confidence: 76%
“…The results of the X-ray and UV excitation of luminescence and conductivity of ZnSe crystals [37] pave the way to study zinc selenide as semiconductor detectors of ionizing radiation for the detection of ionizing radiation.…”
Section: Analysis Of the Experimental Resultsmentioning
confidence: 99%